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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.8mm |
| Length | 6.55mm |
| Model | FZT869TA |
| Width | 3.55mm |
| Mount Type | Surface |
| Series | FZT869 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 25V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 60V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 3W |
| Maximum DC Collector Current Idc | 7A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
DiodesZetex FZT869TA is a high performance general purpose NPN bipolar transistor designed for amplification and switching applications. With a maximum DC collector current of 7A and collector emitter voltage of 25V, it suits a wide range of electronic and industrial circuit needs. The device is presented in a compact and efficient 4-pin SOT-223 surface mount package, enabling integration into modern PCB designs where space is limited.
This transistor supports a maximum power dissipation of 3 watts and can operate safely up to 150°C, making it ideal for demanding environments including automotive and industrial electronics. The minimum DC current gain (hFE) of 40 ensures effective signal amplification, while the transistor polarity is NPN, common in standard circuit topologies.
Robustness is evidenced by meeting the automotive-grade AEC-Q101 standard, increasing reliability and quality assurance for automotive and extended temperature range applications.
Additional characteristics include a maximum collector base voltage of 60V, maximum emitter base voltage of 6V, and a maximum transition frequency of 100MHz, providing versatility for switching and frequency response requirements. The dimensional outline of the device is 6.55mm length, 3.55mm width, and 1.8mm height, facilitating integration in compact layouts.
This transistor is suitable for electronic component manufacturing, automotive electronics, power switching, and general discrete semiconductor applications. It is designed to meet professional-grade industrial, laboratory, and manufacturing standards.
Supports a maximum DC collector current of 7 amperes for high current applications. Maximum collector emitter voltage of 25 volts ensuring suitable voltage tolerance. Features a surface mount SOT-223 package with 4 pins for compact PCB design.
NPN transistor polarity ideal for switching and amplification in circuits. Rated maximum power dissipation of 3 watts for efficient thermal management. Maximum operating temperature of 150 degrees Celsius for reliable operation in harsh environments.
High minimum DC current gain (hFE) of 40 for effective amplification. Meets automotive quality standard AEC-Q101 enhancing robustness and reliability. Explore the extensive range of Bipolar Transistors in the DiodesZetex series and other semiconductor offerings on EnvMart for your electronic component sourcing needs.
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