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ams OSRAM Infrared Phototransistor Through Hole 2-Pin 5 mm (T-1 3/4) Package SFH 313 FA-3/4
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.1mm |
| Brand | ams OSRAM |
| Height | 9mm |
| Length | 5.9mm |
| Model | SFH 313 FA-3/4 |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Series | SFH 313 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 14μs |
| Peak Wavelength | 870nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 20 ° |
| Collector Current | 50mA |
| Maximum Light Current | 12500μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 70V |
| Emitter Collector Voltage | 7V |
Key Features
- Detects infrared spectrum with peak wavelength of 870 nm.
- Typical rise and fall times are 14 microseconds each.
- Maximum collector current is rated at 50 mA with a voltage up to 70 V.
- Operates reliably between -40°C and 100°C temperature range.
- Compact 5.9 mm length and width with 5.1 mm diameter dimensions.
- Features a 20° angle of half sensitivity for precise detection.
- Ideal for use in computer-controlled flashes, photointerrupters, and industrial electronics.
- Mounting type is through-hole for easy PCB insertion.
Product Description
ams OSRAM SFH 313 FA-3/4 infrared phototransistor offers precise and reliable detection of infrared light up to a peak wavelength of 870 nm. Packaged in a 5 mm (T-1 3/4) through-hole 2-pin format, it is suitable for multiple industrial, commercial, and laboratory electronic applications.
This phototransistor provides fast response times with typical rise and fall times of 14 microseconds each, allowing it to detect rapid changes in IR signals efficiently. It supports a maximum collector current rating of 50 mA and collector-emitter voltage of 70 V, making it robust for demanding circuit environments.
The device operates across a wide temperature range from -40°C to 100°C, ensuring dependable performance in harsh conditions. Its compact dimensions, 5.9 mm in length and width and 5.1 mm in diameter, allow easy integration into tight PCB layouts via through-hole mounting.
The phototransistor has a 20° angle of half sensitivity, optimized for directional IR detection, useful in applications like photointerrupters and computer-controlled flashes. The available diffused plastic lenses, either clear or black, help with filtering ambient daylight interference for enhanced signal accuracy.
Detects infrared wavelengths with 870 nm peak sensitivity. Fast response with 14 μs rise and fall times. Max collector current of 50 mA and max voltage 70 V. Wide operating temperature range from -40°C to 100°C. Compact through-hole 5 mm (T-1 3/4) package.
20° angle of half sensitivity for precise detection. RoHS compliant for environmental safety. Suitable for industrial and electronic applications like photointerrupters. Easy PCB mounting with 2-pin configuration.
Its versatility includes use in industrial electronics, control and drive circuits, and detection applications requiring infrared sensing. This product aligns with modern electronics manufacturing standards and environmental regulations.
Explore more industrial Phototransistor components and related ams OSRAM products in the Electronics Components category for enhanced project and production solutions.
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Frequently Asked Questions
The peak wavelength of this infrared phototransistor is 870 nm, allowing it to effectively detect infrared light.
This model has a length and width of 5.9 mm and a diameter of 5.1 mm, making it compact for easy integration into PCB layouts.
The maximum collector current for this phototransistor is rated at 50 mA, suitable for various electronic applications.
It can handle a collector-emitter voltage of up to 70 V, making it robust for demanding circuit environments.
The phototransistor operates reliably between -40°C and 100°C, ensuring performance in harsh conditions.
This model has typical rise and fall times of 14 microseconds each, allowing for quick response to infrared signals.
The phototransistor features a 20° angle of half sensitivity, which optimizes its directional IR detection capabilities.
It uses a through-hole mounting type, which facilitates easy insertion into printed circuit boards (PCBs).
Yes, this model is RoHS compliant, adhering to environmental safety standards.
It is suitable for various applications including photointerrupters and computer-controlled flashes in industrial electronics.
This phototransistor has 2 pins, which is standard for its through-hole package configuration.
The maximum dark current for this phototransistor is 200 nA, ensuring low noise operation in dark conditions.
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