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ams OSRAM Infrared Phototransistor SFH 309 FA-5/6 24° Angle 3mm T-1 Package Through Hole 2-Pin
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 3.1mm |
| Brand | ams OSRAM |
| Height | 5.2mm |
| Length | 4mm |
| Model | SFH 309 FA-5/6 |
| Width | 4mm |
| Mount Type | Through Hole |
| Series | SFH 309 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | 3 mm (T-1) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 7μs |
| Peak Wavelength | 900nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 24 ° |
| Collector Current | 15mA |
| Maximum Light Current | 11200μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 35V |
Key Features
- Detects infrared spectrum light with peak wavelength of 900 nm.
- Typical rise and fall times of 7 microseconds each.
- Maximum collector current rating of 15 mA.
- Operates reliably between -40°C and 100°C.
- Compact 3 mm through-hole T-1 package.
- RoHS compliant ensuring environmental safety.
- Collector emitter voltage rating of 35 V.
Product Description
ams OSRAM SFH 309 FA-5/6 is a high-quality infrared phototransistor designed for precise light detection in industrial and electronic applications. Featuring a 24° angle of half sensitivity, this phototransistor operates with peak wavelength sensitivity at 900 nm, making it effective for infrared sensing tasks.
This device uses a 3mm T-1 through-hole package, providing ease of mounting and reliability for circuit integration. The phototransistor has a typical rise and fall time of 7 microseconds, with a maximum collector current of 15 mA, suitable for photointerrupter circuits and industrial electronics control systems.
Operating reliably between -40°C and 100°C, the SFH 309 FA-5/6 is a robust component for harsh environments. It complies with RoHS standards ensuring environmental safety and sustainability.
The phototransistor’s compact dimensions - 5.2 mm height, 4 mm length, 4 mm width, and 3.1 mm diameter provide flexibility in dense PCB layouts. The collector emitter voltage is rated at 35 V to enable stable operation in various electronic designs.
Infrared spectrum detection with peak sensitivity at 900 nm. Typical rise and fall times of 7 microseconds enable fast response. Maximum collector current rating of 15 mA ensures suitable output drive. Wide operating temperature range from -40°C to 100°C ensures reliability in industrial applications.
RoHS compliant for environmental and safety standards. Compact 3 mm T-1 through-hole package supports efficient PCB mounting. Collector emitter voltage rating of 35 V for operational stability.
This ams OSRAM phototransistor is ideal for use in industrial electronics, photointerrupters, light control circuits, and sensor applications requiring reliable infrared detection. It supports through-hole mounting for robust mechanical assembly in manufacturing environments.
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Frequently Asked Questions
The peak wavelength sensitivity of this phototransistor is 900 nm, making it effective for infrared light detection.
The maximum collector current rating for this model is 15 mA, suitable for various applications including photointerrupters.
It operates reliably between -40°C and 100°C, ensuring functionality in harsh environments.
The dimensions of this phototransistor are 5.2 mm in height, 4 mm in length, 4 mm in width, and a diameter of 3.1 mm.
The angle of half sensitivity for this phototransistor is 24°, which affects its detection range.
This model supports through-hole mounting, which facilitates robust mechanical assembly in electronic circuits.
The collector emitter voltage rating for this device is 35 V, allowing stable operation in various electronic designs.
The typical rise and fall times for this model are both 7 microseconds, enabling fast response times in applications.
This phototransistor is RoHS compliant, ensuring it meets environmental safety and sustainability standards.
This model has 1 channel, suitable for various detection applications.
The maximum dark current for the SFH 309 FA-5/6 is 200 nA, which is relevant for its sensitivity and performance.
This phototransistor is ideal for use in industrial electronics, photointerrupters, and light control circuits that require reliable infrared detection.
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