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ams OSRAM Infrared Phototransistor Through Hole 2-Pin 3 mm (T-1) Package SFH 309 FA-4/5

Category Phototransistor Brand ams OSRAM Condition New

Specifications

Country of Origin India
Diameter 3.1mm
Brand ams OSRAM
Height 5.2mm
Length 4mm
Model SFH 309 FA-4/5
Width 4mm
Mount Type Through Hole
Series SFH 309 FA
Maximum Operating Temperature 100°C
Package Type 3 mm (T-1)
Minimum Operating Temperature -40°C
Number Of Channels 1
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 7μs
Peak Wavelength 900nm
Spectrums Detected Infrared
Angle of Half Sensitivity 24 °
Collector Current 15mA
Maximum Light Current 7200μA
Maximum Dark Current 200nA
Collector Emitter Voltage 35V
IR T-1 Phototransistor 24°,SFH309FA-4Brand OSRAM Opto Semiconductors

Key Features

  • Detects infrared spectrum with a 24° half sensitivity angle.
  • Has a peak wavelength of 900nm for precise infrared detection.
  • Operates within temperature range of -40°C to 100°C.
  • Features a maximum light current of 7200μA and maximum dark current of 200nA.
  • Utilizes a standard 3.1 mm diameter T-1 (3 mm) package for through-hole mounting.
  • Supports a collector emitter voltage up to 35V and collector current of 15mA.
  • Typical rise and fall times are both 7μs, ensuring fast response.
  • Complies with RoHS standards for environmental safety.

Product Description

ams OSRAM SFH 309 FA-4/5 is a highly sensitive NPN silicon infrared phototransistor designed for reliable optical detection in various industrial and electronic applications. Its through-hole 2-pin mounting style fits a standard 3 mm (T-1) package, providing easy integration in photointerrupters, control devices, and industrial electronics.

The device detects infrared spectrum with a typical peak wavelength at 900 nm and a narrow 24° angle of half sensitivity, enabling precise sensing and filtering in ambient light conditions. Operating temperature ranges from -40°C to 100°C, making it suitable for harsh environments.

The phototransistor offers a maximum light current of 7200μA and a dark current of 200nA, supporting efficient signal detection and low noise performance. It supports collector emitter voltages up to 35V and collector currents of 15mA for robust operation.

Both typical rise and fall times of 7μs facilitate fast switching capabilities, critical for rapid detection in control and drive circuits. The SFH 309 FA series complies with RoHS standards, ensuring environmentally friendly manufacture and use.

This phototransistor is ideal for applications such as photointerrupters, industrial electronic devices, and other optoelectronic systems requiring dependable infrared detection with through-hole mounting compatibility.

Detects infrared spectrum with a 24° half sensitivity angle. Peak wavelength of 900nm for precise infrared sensing. Wide operating temperature range from -40°C to 100°C. Maximum light current of 7200μA and dark current of 200nA.

Through-hole 2-pin mounting in a 3 mm (T-1) package. Collector emitter voltage rating of 35V and collector current of 15mA. Typical rise and fall times of 7μs for fast response. RoHS compliant for environmental safety. Suitable for photointerrupters and industrial electronics.

Explore more in the ams OSRAM Phototransistor selection in the Electronics Components category on EnvMart.

ams OSRAM Infrared Phototransistor Through Hole 2-Pin 3 mm (T-1) Package SFH 309 FA-4/5
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Frequently Asked Questions

The peak wavelength of the SFH 309 FA-4/5 phototransistor is 900 nm, allowing for precise infrared detection.

This phototransistor supports a maximum collector current of 15 mA, enabling efficient signal detection.

It operates within a temperature range of -40°C to 100°C, making it suitable for harsh environments.

The half sensitivity angle is 24°, which allows for precise sensing in various applications.

It uses a through-hole mounting style in a standard 3 mm (T-1) package, facilitating easy integration into circuits.

The maximum light current is 7200 μA, which supports efficient optical detection.

Both the typical rise and fall times are 7 μs, ensuring fast response times for detection applications.

The collector emitter voltage rating is up to 35 V, allowing for robust operation in various applications.

This model features 2 pins, which is standard for its through-hole mounting configuration.

It complies with RoHS standards, ensuring environmental safety during manufacture and use.

It is suitable for applications such as photointerrupters and industrial electronic devices requiring infrared detection.

The dimensions are 4 mm in length, 4 mm in width, and 5.2 mm in height, with a diameter of 3.1 mm.

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