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Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, TO-263 Package, Surface Mount, 3-Pin TK14G65W,RQ(S
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 4.46mm |
| Length | 10.35mm |
| Model | TK14G65W,RQ(S |
| Width | 8.8mm |
| Mount Type | Surface |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13.7A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 13.7 A ensures efficient current handling.
- High drain-source voltage rating of 650 V supports high voltage circuits.
- TO-263 package offers reliable surface mount mounting style.
- Low maximum drain-source resistance of 250 milliohm improves conduction efficiency.
- Enhancement mode channel delivers controlled switching performance.
- Typical gate charge of 35 nC facilitates fast switching.
- Maximum power dissipation of 130 W supports heavy load conditions.
- Wide gate-source voltage range from -30 V to +30 V enables robust gate control.
Product Description
Toshiba TK14G65W,RQ(S is a high-performance DTMOSIV N-Channel MOSFET transistor designed for industrial electronic applications requiring reliable switching at elevated voltages and currents.
This MOSFET supports a maximum continuous drain current of 13.7 amperes and a drain-source voltage up to 650 volts, making it suitable for power management tasks in industrial power supplies, motor control circuits, and other demanding power semiconductor uses.
The device uses enhancement mode channel technology, packaged in a TO-263 surface-mount format that facilitates easy PCB assembly with secure mechanical stability. Its low ON-resistance of 250 milliohm helps minimize conduction losses and improve efficiency in power circuits.
The typical gate charge of 35 nanocoulombs allows rapid switching cycles, critical for high-frequency operations. Operating temperature capability up to 150°C ensures reliable performance in harsh industrial and manufacturing environments.
The transistor has compact physical dimensions with a length of 10.35 mm, width of 8.8 mm, and height of 4.46 mm. It supports a wide gate-source voltage range (-30 to +30 V) to accommodate various gate drive schemes. Forward voltage drop characteristics are -1.7 V.
Maximum continuous drain current of 13.7 A. Maximum drain-source voltage of 650 V. Package type: TO-263 for surface mounting. Low drain-source resistance of 250 milliohm. Enhancement mode channel type. Typical gate charge at 35 nC for efficient switching.
Power dissipation rating of 130 W. Gate-source voltage range of -30 to +30 V. Operating temperature up to 150°C. Compact physical size for board space savings. Manufactured in Japan. This MOSFET is commonly used in industrial electronics, power supply designs, motor controllers, and other semiconductor-based power switching configurations.
For detailed design and application information, refer to Toshiba technical documentation and datasheets. Explore similar semiconductor devices and MOSFET components at EnvMart for your industrial and manufacturing projects.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 13.7 A, ensuring efficient current handling for various applications.
This MOSFET has a maximum drain-source voltage rating of 650 V, suitable for high voltage circuits.
It is packaged in a TO-263 format, which is designed for surface mounting, facilitating easy PCB assembly.
The maximum power dissipation rating for this unit is 130 W, allowing it to support heavy load conditions.
The typical gate charge is 35 nC, which allows for efficient and fast switching operations.
It supports a wide gate-source voltage range from -30 V to +30 V, enabling robust gate control.
The dimensions are 10.35 mm in length, 8.8 mm in width, and 4.46 mm in height, making it compact for board space savings.
This model can operate at a maximum temperature of 150°C, ensuring reliable performance in harsh environments.
It uses an enhancement mode channel type, which provides controlled switching performance.
The maximum drain-source resistance is 250 milliohm, which helps minimize conduction losses and improve efficiency.
This MOSFET is commonly used in industrial electronics, power supply designs, and motor control circuits.
This model is manufactured in Japan, ensuring adherence to high manufacturing standards.
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