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Infineon HEXFET Type P-Channel MOSFET 6.6 A 100 V Enhancement 3-Pin TO-252 IRFR9120NTRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR9120NTRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 480mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- This MOSFET supports a high continuous drain current of 6.6 A for demanding electrical circuits.
- Maximum drain-source voltage is rated at 100 V ensuring reliable performance under high voltage conditions.
- The device uses enhancement mode operation with a low drain-source resistance (Rds) of 480mΩ, improving energy efficiency.
- Designed in a surface mount DPAK TO-252 package with 3 pins for streamlined PCB integration.
- Operates reliably across a wide temperature range from -55°C to 150°C for versatile industrial environments.
- The typical gate charge is 27nC at gate voltage, enabling precise switching characteristics.
- The maximum gate-source voltage tolerance is -20 V to +20 V, enhancing robustness in control circuits.
- This MOSFET features a forward voltage of -1.6 V suited for power applications.
Product Description
Infineon IRFR9120NTRPBF HEXFET Type P-Channel MOSFET is a critical electronic component engineered for advanced power management solutions. Featuring a maximum continuous drain current rating of 6.6 A and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET is housed in a 3-pin TO-252 DPAK package ideal for surface mounting.
Its low maximum drain-source resistance of 480mΩ drastically reduces power loss, contributing to higher efficiency and lower heat dissipation in electronic circuits. The device operates effectively within an extensive temperature range of -55°C to 150°C, making it suitable for harsh industrial environments including automation and electrical engineering applications.
The design includes a typical gate charge of 27nC and supports a maximum gate-source voltage from -20 V to +20 V, ensuring reliable gate control during switching. Its forward voltage of -1.6 V helps in efficient power transfer and switching operations.
This MOSFET finds applications in power management within industrial equipment, DC-DC converters, inverters, and motor control systems. Its robust build and electrical characteristics make it a preferred choice for engineers designing efficient power electronics and control systems.
High continuous drain current rating of 6.6 A supports demanding industrial applications. Maximum voltage rating of 100 V for robust operation under load. Enhanced switching performance due to low Rds(on) of 480mΩ. Compact DPAK TO-252 surface mount package for efficient PCB layout.
Wide operating temperature from -55°C to 150°C ensures reliability. Precise gate control with typical gate charge of 27nC. Wide gate-source voltage tolerance (-20 V to +20 V) for versatile applications. Suitable for power management circuits, automation, and motor control systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 6.6 A, making it suitable for demanding electrical circuits.
This MOSFET has a maximum drain-source voltage rating of 100 V, ensuring reliable performance under high voltage conditions.
The typical gate charge for this model is 27 nC at gate voltage, which enables precise switching characteristics.
It features a low maximum drain-source resistance (Rds) of 480 mΩ, which improves energy efficiency in applications.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for various industrial environments.
The maximum power dissipation for this MOSFET is rated at 40 W, allowing it to handle significant power loads.
It supports a maximum gate-source voltage tolerance of -20 V to +20 V, enhancing its robustness in control circuits.
This model uses surface mounting in a DPAK TO-252 package, which is designed for efficient PCB integration.
This MOSFET is suitable for power management circuits, including DC-DC converters, inverters, and motor control systems.
The forward voltage for this model is -1.6 V, which is suited for efficient power applications.
This model belongs to the HEXFET series, which is known for its enhancement mode operation.
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