Toshiba DTMOSIV N-Channel MOSFET, 8 A Maximum Continuous Drain Current, 600 V Drain Source Voltage TK8P60W5,RVQ(S

Toshiba TK8P60W5,RVQ(S is a high quality N-Channel MOSFET semiconductor device from the DTMOSIV series designed for power switching applications. It is housed in a surface-mount TO-252 package with 3 pins, facilitating compact PCB layouts in electronic component designs.

This MOSFET features a maximum continuous drain current of 8 amperes and a maximum drain-source voltage rating of 600 volts, making it suitable for applications requiring moderate power and voltage handling capabilities.

As an enhancement mode device, it offers reliable channel modulation with low typical gate charge of 22 nC to enhance switching performance and reduce power losses.

With a maximum drain-source resistance of 560 milliohms, it ensures efficient conduction. The device supports a maximum power dissipation of 80 watts, making it suitable for industrial, power management, and electronic designs.

Electrical characteristics include a forward voltage of -1.7 volts and a maximum gate-source voltage range from -30 volts to +30 volts, providing wide operating flexibility. The compact package dimensions of 6.6 mm length, 6.1 mm width, and 2.3 mm height permit integration in space constrained designs.

Operating temperature up to 150°C confirms robust performance in demanding environmental conditions. This product is manufactured in Japan following stringent quality standards, ensuring long-term reliability and durability.

This MOSFET operates in enhancement mode for precise channel control. Low on-resistance of 560 milliohms for efficient conduction. Maximum continuous drain current of 8 A suits power related applications. Supports up to 600 V maximum drain-source voltage for versatile use cases.

Compact 3-pin TO-252 surface mount package. Maximum power dissipation rating of 80 W enables robust thermal handling. Typical gate charge of 22 nC enhances switching efficiency. Wide maximum gate-source voltage of -30 to +30 V.

Forward voltage of -1.7 V improves conduction characteristics. Operates up to 150°C maximum temperature. Manufactured in Japan for quality assurance. This Toshiba N-Channel MOSFET is ideal for use in power electronics, industrial automation, consumer electronics, automotive electronics, and other semiconductor applications.

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