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Toshiba U-MOSVIII-H N-Channel MOSFET 15 A, 40 V, Enhancement Mode, 3-Pin TO-252 TK15S04N1L,LQ(O

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 2.3mm
Length 6.5mm
Model TK15S04N1L,LQ(O
Width 5.5mm
Mount Type Surface
Series U-MOSVIII-H
Maximum Operating Temperature 175°C
Package Type TO-252
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 15A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 37mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 46W
Typical Gate Charge Qg @ Vgs 10nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • This power MOSFET operates in enhancement mode with a low 37 milliohm on-resistance.
  • Designed for surface mount applications offering efficient power management.
  • Maximum power dissipation rated at 46 watts for reliable thermal performance.
  • Maximum gate-source voltage ranges from -20 to +20 volts ensuring robust gate control.
  • Typical gate charge is low at 10 nanocoulombs, optimizing switching efficiency.
  • Forward voltage is rated at -1.2 volts suitable for high-speed switching.
  • Capable of operating up to 175°C, suitable for demanding thermal environments.

Product Description

Toshiba TK15S04N1L,LQ(O is a U-MOSVIII-H series N-Channel Enhancement Mode power MOSFET, designed for surface mount applications requiring efficient power control and switching. Featuring a continuous drain current of 15 A and a maximum drain-source voltage of 40 V, it supports robust and reliable operation in various electronics and semiconductor device applications.

The 3-pin TO-252 package offers a compact footprint for modern PCB layouts. With a typical gate charge of just 10 nC at 10 V, this MOSFET supports rapid switching performance while minimizing power loss. The low maximum drain-source resistance of 37 milliohms reduces conduction losses, improving overall system efficiency.

Operating safely at temperatures up to 175°C, this device is well suited for demanding industrial and commercial environments such as power supplies, motor drives, and general-purpose power management in electronic circuits. It supports a maximum gate-source voltage range of -20 V to +20 V for flexible gate drive designs.

Physical dimensions are 6.5 mm length, 5.5 mm width, and 2.3 mm height, making integration into compact assemblies straightforward. Despite the compact size, the MOSFET can dissipate up to 46 watts of power, enabling high-performance applications.

Enhancement mode N-Channel MOSFET with 15 A continuous drain current rating. Maximum drain-source voltage of 40 V ensuring solid switching capability. Compact 3-pin TO-252 surface-mount package for space-saving design. Low on-resistance of 37 milliohms for efficient conduction.

Maximum power dissipation capacity of 46 watts. Wide allowable gate-source voltage range from -20 V to +20 V. Typical gate charge of 10 nanocoulombs enhances switching efficiency. Forward voltage of -1.2 V suitable for effective switching.

Designed to operate up to 175°C in harsh environments. Manufactured in Japan ensuring high quality standards.

This Toshiba MOSFET is ideal for industrial, power management, consumer electronics, and automotive electronics use cases, where efficient power switching and thermal robustness are critical. It suits applications such as motor drives, power supply units, DC-DC converters, and electronic load switching.

Explore related power semiconductor components and electronic parts in EnvMart's Electronics & Electricals category for matching system and design requirements.

Toshiba U-MOSVIII-H N-Channel MOSFET 15 A, 40 V, Enhancement Mode, 3-Pin TO-252 TK15S04N1L,LQ(O
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Frequently Asked Questions

The maximum continuous drain current for this model is 15 A.

This MOSFET has a maximum drain-source voltage of 40 V.

The on-resistance is rated at a low 37 milliohms, which helps reduce conduction losses.

The typical gate charge is 10 nanocoulombs, optimizing switching efficiency.

It can dissipate a maximum power of 46 watts, enabling high-performance applications.

The dimensions are 6.5 mm in length, 5.5 mm in width, and 2.3 mm in height.

This model can operate safely at temperatures up to 175°C.

The maximum gate-source voltage ranges from -20 V to +20 V, allowing for flexible gate drive designs.

It is suitable for applications such as power supplies, motor drives, and general-purpose power management in electronic circuits.

The forward voltage is rated at -1.2 volts, which is suitable for high-speed switching.

This device features a 3-pin configuration, making it compact for surface mount applications.

This model is part of the U-MOSVIII-H series designed for efficient power control and switching.

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