Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V Enhancement Mode, 3-Pin TO-220 TK25A60X,S5X(M

Toshiba TK25A60X,S5X(M N-Channel MOSFET is a high-performance discrete semiconductor suited for electronic applications requiring efficient power switching and control.

This MOSFET from the DTMOSIV series is built as a 3-pin TO-220 package for through-hole mounting, accommodating power dissipation of up to 45 W and sustaining continuous drain current up to 25 A with a maximum drain-source voltage of 600 V.

Featuring a maximum drain-source resistance of 125 mΩ, it ensures minimal losses and high efficiency in power circuits. The enhancement mode operation and gate-source voltage range (-30 V to +30 V) facilitate robust switching capabilities. Typical gate charge of 40 nC at 40 V guarantees quick response times, critical in industrial, automotive, and power management uses.

Compact dimensions (height: 15 mm, length: 10 mm, width: 4.5 mm) provide easy fitting into electronic designs. It withstands operating temperatures up to 150 °C, allowing reliable operation under harsh conditions.

This device excels in various industrial and electronic sectors, including power supplies, motor control, and switching regulators. Its durable build and consistent specs make it suitable for laboratory, manufacturing, and HVAC power control applications.

This MOSFET features a 125 mΩ maximum drain-source resistance for efficient conductivity. It operates in enhancement mode providing reliable switching performance. The device supports a maximum power dissipation of 45 W for robust applications.

Maximum gate-source voltage ranges from -30 V to +30 V, ensuring control stability. Typical gate charge is 40 nC at 40 V gate-source voltage, allowing high-speed switching. It has a compact form factor with dimensions approximately 15 mm height, 10 mm length, and 4.5 mm width.

Designed for through-hole mounting, supporting easy integration into electronic assemblies. Maximum operating temperature extends up to 150 °C, suitable for demanding environments. Forward voltage is -1.7 V enhancing efficient current flow in circuits.

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