Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V Enhancement Mode, 3-Pin TO-220 TK31E60X,S1X(S

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 15.1mm
Length 10.16mm
Model TK31E60X,S1X(S
Width 4.45mm
Mount Type Through Hole
Series DTMOSIV
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 30.8A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 88mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 230W
Typical Gate Charge Qg @ Vgs 65nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf -1.7V

Key Features

  • Enhancement mode N-Channel MOSFET suitable for power electronics applications.
  • Maximum continuous drain current of 30.8 amperes for high current demands.
  • Maximum drain-source voltage rating of 600 volts for robust voltage endurance.
  • Through-hole mount type with a 3-pin TO-220 package for easy PCB integration.
  • Maximum power dissipation of 230 watts ensuring efficient heat handling.
  • Low maximum drain-source resistance of 88 milliohms improving conduction efficiency.
  • Wide operating temperature range up to 150°C for industrial conditions.
  • Typical gate charge of 65 nanocoulombs enabling fast switching speeds.

Product Description

Toshiba TK31E60X,S1X(S is a high-performance DTMOSIV series N-Channel MOSFET designed for power electronics and semiconductor applications. Featuring a maximum continuous drain current of 30.8 amperes and a maximum drain-source voltage of 600 volts, this transistor is engineered to handle demanding industrial and commercial electronic scenarios.

The device uses enhancement mode channel technology and is housed in a 3-pin TO-220 through-hole package, facilitating reliable mounting and effective heat dissipation. Its low drain-source resistance of 88 milliohms ensures minimal conduction losses, which contributes to energy efficiency in power circuits.

Rated for power dissipation up to 230 watts and operational temperature up to 150°C, this MOSFET is suitable for use in industrial controls, power converters, motor drives, and other applications requiring robust, reliable switching components. The maximum gate-source voltage of ±30 volts enables flexible gate drive management, while the typical gate charge of 65 nanocoulombs supports rapid switching speeds essential for modern high-frequency power electronics.

The compact package dimensions (Width: 4.45 mm, Height: 15.1 mm, Length: 10.16 mm) allow space-efficient designs on printed circuit boards, especially in environments where thermal management and footprint are critical.

Enhancement mode N-Channel MOSFET for high-power switching. Maximum continuous drain current of 30.8 A for demanding applications. 600 V maximum drain-source voltage to handle high-voltage circuits. Through-hole TO-220 packaging supports robust mounting and cooling.

Low on-resistance at 88 mΩ maximizes energy efficiency. 230 W maximum power dissipation supports high thermal loads. Wide temperature operation up to 150°C for harsh environments. Fast switching capability with a typical gate charge of 65 nC.

Forward voltage of -1.7 V ensures precise electronic control.

This Toshiba MOSFET is made in Japan, guaranteeing high manufacturing standards and reliability. It is an ideal component for industrial electronics, power management circuits, and applications requiring efficient high-voltage switching with low losses. Explore additional products in the MOSFET category to find compatible power components and enhance your electronic designs.

Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V Enhancement Mode, 3-Pin TO-220 TK31E60X,S1X(S
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 30.8 amperes, making it suitable for high current demands in power electronics applications.

This MOSFET has a maximum drain-source voltage rating of 600 volts, which allows it to handle high-voltage circuits effectively.

It features a through-hole mount type with a 3-pin TO-220 package, facilitating easy PCB integration and reliable mounting.

The maximum power dissipation for this MOSFET is 230 watts, ensuring efficient heat handling during operation.

The typical gate charge is 65 nanocoulombs, which supports fast switching speeds essential for modern power electronics.

This model can operate at a maximum temperature of 150°C, making it suitable for industrial conditions.

The maximum drain-source resistance is 88 milliohms, which improves conduction efficiency and minimizes energy losses.

The dimensions of this model are 4.45 mm in width, 15.1 mm in height, and 10.16 mm in length, allowing for space-efficient designs.

The maximum gate-source voltage for this MOSFET is ±30 volts, which allows for flexible gate drive management.

This MOSFET is suitable for applications such as industrial controls, power converters, and motor drives that require robust switching components.

The forward voltage is -1.7 volts, which ensures precise electronic control in circuits.

This model belongs to the DTMOSIV series, designed for high-performance power electronics applications.

Related Products

Other Products from this brand

$5.96
$5.78 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$5.96
$5.78
Tax included