$5.96
$5.78
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK31E60X,S1X(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30.8A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 88mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Toshiba TK31E60X,S1X(S is a high-performance DTMOSIV series N-Channel MOSFET designed for power electronics and semiconductor applications. Featuring a maximum continuous drain current of 30.8 amperes and a maximum drain-source voltage of 600 volts, this transistor is engineered to handle demanding industrial and commercial electronic scenarios.
The device uses enhancement mode channel technology and is housed in a 3-pin TO-220 through-hole package, facilitating reliable mounting and effective heat dissipation. Its low drain-source resistance of 88 milliohms ensures minimal conduction losses, which contributes to energy efficiency in power circuits.
Rated for power dissipation up to 230 watts and operational temperature up to 150°C, this MOSFET is suitable for use in industrial controls, power converters, motor drives, and other applications requiring robust, reliable switching components. The maximum gate-source voltage of ±30 volts enables flexible gate drive management, while the typical gate charge of 65 nanocoulombs supports rapid switching speeds essential for modern high-frequency power electronics.
The compact package dimensions (Width: 4.45 mm, Height: 15.1 mm, Length: 10.16 mm) allow space-efficient designs on printed circuit boards, especially in environments where thermal management and footprint are critical.
Enhancement mode N-Channel MOSFET for high-power switching. Maximum continuous drain current of 30.8 A for demanding applications. 600 V maximum drain-source voltage to handle high-voltage circuits. Through-hole TO-220 packaging supports robust mounting and cooling.
Low on-resistance at 88 mΩ maximizes energy efficiency. 230 W maximum power dissipation supports high thermal loads. Wide temperature operation up to 150°C for harsh environments. Fast switching capability with a typical gate charge of 65 nC.
Forward voltage of -1.7 V ensures precise electronic control.
This Toshiba MOSFET is made in Japan, guaranteeing high manufacturing standards and reliability. It is an ideal component for industrial electronics, power management circuits, and applications requiring efficient high-voltage switching with low losses. Explore additional products in the MOSFET category to find compatible power components and enhance your electronic designs.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent