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Toshiba DTMOSIV N-Channel MOSFET 20 A 600 V Enhancement Mode 3-Pin TO-247 TK20N60W5,S1VF(S
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 20.95mm |
| Length | 15.94mm |
| Model | TK20N60W5,S1VF(S |
| Width | 5.02mm |
| Mount Type | Through Hole |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 165W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET features enhancement mode channel operation for efficient switching.
- Maximum power dissipation is rated at 165 watts for robust performance.
- Typical gate charge is 55 nC at Vgs providing optimized gate drive characteristics.
- Maximum operating temperature is 150°C for reliable thermal endurance.
- The device supports a maximum gate source voltage range from -30 to +30 volts.
- It is designed for through-hole mounting with a compact 3-pin TO-247 package.
- Drain-source resistance (Rds) is low at 175 milliohms for minimal conduction losses.
Product Description
The Toshiba TK20N60W5,S1VF(S is a high-performance DTMOSIV N-Channel MOSFET designed for power electronic applications requiring high current and voltage capabilities.
With a maximum continuous drain current of 20 amperes and a drain-source voltage rating of 600 volts, this device delivers efficient switching and reliable operation under demanding conditions.
The enhancement mode channel configuration allows for fast switching speeds, suitable for DC-DC converters, motor control, and power supplies in industrial and commercial electronic systems.
Equipped with a through-hole 3-pin TO-247 package, the MOSFET is suitable for assembly on printed circuit boards requiring robust mechanical stability and efficient heat dissipation.
Key technical parameters include a maximum power dissipation of 165 watts and a typical gate charge of 55 nanocoulombs at a gate voltage of 5.5 volts, ensuring optimized gate drive requirements.
It also supports a wide gate-source voltage range (-30 V to +30 V) for flexibility in circuit design. The device operates safely up to 150°C, making it suitable for demanding thermal environments.
This MOSFET's low on-resistance (175 mΩ) contributes to enhanced energy efficiency and reduced heat generation. The compact dimensions (20.95mm x 15.94mm x 5.02mm) facilitate versatile integration into various electronic assemblies.
Manufactured in Japan, the Toshiba TK20N60W5,S1VF(S represents a reliable choice for semiconductor components in industrial electronics, power management, automotive, and consumer electronics applications.
Explore more high-quality semiconductor components and discrete MOSFET devices in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Toshiba TK20N60W5,S1VF(S is 20 amperes.
This model has a maximum drain-source voltage rating of 600 volts.
It is rated for a maximum power dissipation of 165 watts.
The typical gate charge at a gate-source voltage of 5.5 volts is 55 nanocoulombs.
This device comes in a TO-247 package and is designed for through-hole mounting.
The maximum operating temperature for the Toshiba TK20N60W5,S1VF(S is 150°C.
The drain-source resistance is low at 175 milliohms, which helps minimize conduction losses.
It supports a maximum gate-source voltage range from -30 to +30 volts.
The dimensions of the Toshiba TK20N60W5,S1VF(S are 20.95mm in height, 15.94mm in length, and 5.02mm in width.
This model features an enhancement mode N-channel configuration.
It is suitable for power electronic applications such as DC-DC converters, motor control, and power supplies in industrial and commercial systems.
This MOSFET is manufactured in Japan.
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