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Vishay N-Channel Enhancement MOSFET 5.6A 100V TO-263 3-Pin IRF510SPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF510SPBF |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.6A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 540mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.7W |
| Typical Gate Charge Qg @ Vgs | 8.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
| N-channel MOSFET,IRF510S 5.6A 100VBrand | Vishay |
Key Features
- Maximum continuous drain current of 5.6A enables efficient power management.
- Supports drain-source voltage up to 100V suitable for medium voltage applications.
- Surface mounted device in TO-263 package type with 3 pins for compact design.
- Low maximum drain-source resistance of 540 milliohms reduces conduction losses.
- Operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
- Typical gate charge of 8.3 nanocoulombs optimizes switching performance.
- Forward voltage rating of 2.5V supports efficient conduction behavior.
- Maximum power dissipation of 3.7 watts allows thermal stability in normal operating conditions.
Product Description
The Vishay IRF510SPBF is a high performance N-Channel Enhancement MOSFET designed for power electronics applications requiring up to 5.6 amps continuous current and 100 volts maximum drain-source voltage. This device is housed in a compact TO-263 package with three pins for efficient surface mounting on printed circuit boards.
Constructed with a low on-resistance of 540 milliohms, this MOSFET features an enhancement mode channel for reliable switching performance. It supports a maximum gate-source voltage range of -20 to +20 volts, making it suitable for various drive conditions.
With a typical gate charge of 8.3 nanocoulombs, it achieves fast switching speeds and low switching losses. Maximum power dissipation is rated at 3.7 watts, providing good thermal management in embedded and industrial circuits. The device can operate over a wide temperature range from -55 to 175 degrees Celsius, allowing use in demanding industrial, automotive, and power supply applications.
High continuous drain current rating of 5.6 amperes. Maximum drain-source voltage of 100 volts supports medium voltage loads. Surface mount TO-263 package with 3 pins for convenient PCB integration. Low on-resistance minimizes power loss and heat generation.
Wide operating temperature range from -55°C to 175°C. Typical gate charge optimized for efficient switching. Enhanced reliability for automotive and industrial uses. Forward voltage of 2.5 volts for conduction efficiency.
Rated maximum power dissipation of 3.7 watts.
This Vishay N-Channel MOSFET IRF510SPBF is ideal for applications including power supplies, motor control circuits, and switching regulators in industrial, automotive, and consumer electronic systems. Its robust design and proven performance make it a reliable component for demanding environments.
Explore more discrete semiconductor solutions and MOSFET devices in the Electronics & Electricals category at EnvMart to meet diverse industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.6A.
This MOSFET supports a maximum drain-source voltage of 100V.
It is housed in a TO-263 package type, which is suitable for surface mounting.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The typical gate charge for this model is 8.3 nanocoulombs.
The maximum power dissipation for the IRF510SPBF is rated at 3.7 watts.
The forward voltage rating is 2.5V, which supports efficient conduction behavior.
The TO-263 package of this model has 3 pins.
The maximum gate-source voltage range for this MOSFET is -20 to +20 volts.
The maximum drain-source resistance is 540 milliohms, which helps reduce conduction losses.
This model features an N-channel enhancement mode channel.
This MOSFET is suitable for applications including power supplies, motor control circuits, and switching regulators.
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