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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF610PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.3A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 8.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-Channel MOSFET Transistor, 3.3 A, 200 V, 3-Pin TO-220AB Fairchild IRF610Brand | Fairchild Semiconductor |
Vishay IRF610PBF is a high-quality N-Channel MOSFET transistor designed for power switching and amplification applications. It features a maximum continuous drain current of 3.3 A, a drain-source voltage capability of 200 V, and a power dissipation rating of 36 W. The device is housed in a compact 3-pin TO-220 package, making it suitable for through-hole mounting in various electronic assemblies.
This enhancement mode MOSFET operates efficiently over wide temperature ranges from -55°C to 150°C, making it suitable for industrial, commercial, and laboratory electronics environments. Its forward voltage of 2 V ensures minimal power loss during conduction, and the typical gate charge of 8.2 nC at Vgs supports fast switching performance.
The physical dimensions of the device are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width, confirming its suitability for compact circuit designs.
The IRF610PBF is well-regarded within semiconductor applications requiring reliable power MOSFETs without automotive-grade certifications but with robust operating parameters. Its three-pin configuration simplifies integration into power management and control circuits.
This MOSFET handles a drain current of 3.3 A continuously. It supports a drain-source voltage rating of 200 V for high power circuits. Power dissipation up to 36 W allows for moderate load handling without overheating. Three-pin TO-220 package enables easy installation and heat dissipation.
Suitable for through-hole mounting technology. Operating temperature range from -55°C to 150°C supports diverse applications. Gate charge and forward voltage parameters optimize efficiency and switching speed. Enhancement mode transistor architecture offers controlled conduction.
Compact physical dimensions facilitate space-saving circuit layouts. Complies with general semiconductor standards without specific automotive certifications.
This Vishay MOSFET model IRF610PBF is ideal for electronic engineers and technicians requiring a dependable N-channel transistor for power control tasks in industrial, laboratory, construction, and manufacturing applications. It is available through EnvMart, providing a trusted sourcing option for electronic components.
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