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Vishay IRF N-Channel MOSFET, 3.3 A, 200 V, Enhancement Mode, 3-Pin TO-220 IRF610PBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF610PBF
Width 4.7mm
Mount Type Through Hole
Series IRF
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3.3A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 36W
Typical Gate Charge Qg @ Vgs 8.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 2V
N-Channel MOSFET Transistor, 3.3 A, 200 V, 3-Pin TO-220AB Fairchild IRF610Brand Fairchild Semiconductor

Key Features

  • This MOSFET supports a maximum continuous drain current of 3.3 A.
  • It features a maximum drain-source voltage of 200 V for reliable high voltage operation.
  • The device has a maximum power dissipation rating of 36 W, suitable for moderate power applications.
  • Its gate threshold and resistances ensure efficient switching performance.
  • Mounting is designed for through-hole installation with three pins.
  • Operating temperature ranges from -55°C to 150°C for industrial and commercial use.
  • Forward voltage of 2 V and typical gate charge of 8.2 nC at Vgs enhances switching efficiency.
  • Designed as an enhancement mode device, it is well suited for switching and amplification.

Product Description

Vishay IRF610PBF is a high-quality N-Channel MOSFET transistor designed for power switching and amplification applications. It features a maximum continuous drain current of 3.3 A, a drain-source voltage capability of 200 V, and a power dissipation rating of 36 W. The device is housed in a compact 3-pin TO-220 package, making it suitable for through-hole mounting in various electronic assemblies.

This enhancement mode MOSFET operates efficiently over wide temperature ranges from -55°C to 150°C, making it suitable for industrial, commercial, and laboratory electronics environments. Its forward voltage of 2 V ensures minimal power loss during conduction, and the typical gate charge of 8.2 nC at Vgs supports fast switching performance.

The physical dimensions of the device are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width, confirming its suitability for compact circuit designs.

The IRF610PBF is well-regarded within semiconductor applications requiring reliable power MOSFETs without automotive-grade certifications but with robust operating parameters. Its three-pin configuration simplifies integration into power management and control circuits.

This MOSFET handles a drain current of 3.3 A continuously. It supports a drain-source voltage rating of 200 V for high power circuits. Power dissipation up to 36 W allows for moderate load handling without overheating. Three-pin TO-220 package enables easy installation and heat dissipation.

Suitable for through-hole mounting technology. Operating temperature range from -55°C to 150°C supports diverse applications. Gate charge and forward voltage parameters optimize efficiency and switching speed. Enhancement mode transistor architecture offers controlled conduction.

Compact physical dimensions facilitate space-saving circuit layouts. Complies with general semiconductor standards without specific automotive certifications.

This Vishay MOSFET model IRF610PBF is ideal for electronic engineers and technicians requiring a dependable N-channel transistor for power control tasks in industrial, laboratory, construction, and manufacturing applications. It is available through EnvMart, providing a trusted sourcing option for electronic components.

Vishay IRF N-Channel MOSFET, 3.3 A, 200 V, Enhancement Mode, 3-Pin TO-220 IRF610PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.3 A.

It features a maximum drain-source voltage rating of 200 V, suitable for high voltage applications.

The maximum power dissipation rating is 36 W, allowing it to handle moderate power applications.

The dimensions of this model are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.

This model is designed for through-hole mounting with a three-pin configuration.

The operating temperature range is from -55°C to 150°C, making it suitable for various environments.

The typical gate charge at Vgs is 8.2 nC, which supports efficient switching performance.

The forward voltage is 2 V, ensuring minimal power loss during conduction.

This model is an N-channel MOSFET, designed for enhancement mode operation.

The maximum gate-source voltage is -20 V to +20 V, allowing for flexible control.

The maximum drain-source resistance is 1.5 Ω, which contributes to its performance characteristics.

It is suitable for power switching and amplification applications in industrial, commercial, and laboratory environments.

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