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Vishay N-Channel MOSFET TO-220 Package 1.4 A 1 kV Enhancement Mode 3-Pin IRFBG20PBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRFBG20PBF
Width 4.7mm
Mount Type Through Hole
Series IRFBG
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 1.4A
Maximum Drain Source Voltage Vds 1kV
Maximum Drain Source Resistance Rds 11Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 54W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Enhancement mode N-Channel MOSFET designed for high voltage applications.
  • Supports a maximum drain current of 1.4 amperes for continuous operation.
  • Compact TO-220 through-hole package with three pins for easy integration.
  • Maximum power dissipation is rated at 54 watts for thermal stability.
  • Wide operating temperature range from -55°C to 150°C enhances durability.
  • Low maximum drain-source resistance of 11 ohms minimizes energy losses.
  • Typical gate charge of 38 nC offers efficient switching performance.
  • Maximum gate-source voltage ranges from -20 to +20 volts, providing strong gate control.

Product Description

The Vishay IRFBG20PBF is a reliable N-Channel MOSFET designed to handle high-voltage and moderate current semiconductor switching tasks. Packaged in a robust TO-220 3-pin through-hole form factor, this MOSFET supports a maximum continuous drain current of 1.4 amperes and maximum drain-source voltage of 1000 volts, making it well suited for power electronics including industrial control systems, power supplies, and automotive electronic circuits.

This device features enhancement mode channel operation optimized for efficient switching, coupled with a low maximum drain-source resistance of 11 ohms, which minimizes conduction losses and enhances energy efficiency. The MOSFET offers a maximum power dissipation capability of 54 watts ensuring stable operation under high thermal load within its maximum operating temperature of 150°C and a minimum temperature threshold of -55°C, thereby supporting demanding environmental conditions.

The typical gate charge of 38 nano-coulombs at Vgs allows for fast switching responses, essential for modern electronic designs requiring rapid signal processing. The gate-source voltage tolerance ranges between -20 to +20 volts, affording robust gate drive capabilities while ensuring device protection. The device exhibits a forward voltage drop of 1.5 volts supporting effective forward conduction.

The compact height of 9.01 mm, length of 10.41 mm, and width of 4.7 mm contribute to a space-efficient footprint ideal for compact PCB layouts. This MOSFET has no specific standards or approvals and does not conform to automotive standards, making it primarily suitable for general electronic and industrial applications.

Application areas include industrial machines, laboratory equipment, electrical power systems, and commercial electronic devices. Its through-hole mounting style facilitates easy replacement and prototyping on standard PCBs.

Enhancement mode N-Channel MOSFET designed for high voltage applications. Supports a maximum drain current of 1.4 amperes for continuous operation. Voltage rating up to 1000 volts ensures reliability in demanding circuits.

Compact TO-220 through-hole package with three pins for easy integration. Maximum power dissipation is rated at 54 watts for thermal stability. Wide operating temperature range from -55°C to 150°C enhances durability. Low maximum drain-source resistance of 11 ohms minimizes energy losses.

Typical gate charge of 38 nC offers efficient switching performance. Maximum gate-source voltage ranges from -20 to +20 volts, providing strong gate control. Forward voltage of 1.5 V supports rapid conduction in circuits.

Explore more Vishay semiconductor components and electronic parts available in the Electronics & Electricals category on EnvMart for your industrial and lab needs.

Vishay N-Channel MOSFET TO-220 Package 1.4 A 1 kV Enhancement Mode 3-Pin IRFBG20PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.4 amperes.

This MOSFET has a maximum drain-source voltage rating of 1000 volts.

It can dissipate a maximum power of 54 watts, ensuring stable operation under thermal load.

The operating temperature range is from -55°C to 150°C.

The maximum gate-source voltage ranges from -20 to +20 volts.

The typical gate charge is 38 nano-coulombs at Vgs.

It features a low maximum drain-source resistance of 11 ohms, which helps minimize energy losses.

This model is packaged in a TO-220 through-hole package with three pins.

The forward voltage drop is 1.5 volts, supporting effective forward conduction.

It is suitable for applications in industrial machines, laboratory equipment, electrical power systems, and commercial electronic devices.

The dimensions are 9.01 mm in height, 10.41 mm in length, and 4.7 mm in width.

This device does not have specific standards or approvals and is not compliant with automotive standards.

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