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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBG20PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBG |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.4A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 11Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
The Vishay IRFBG20PBF is a reliable N-Channel MOSFET designed to handle high-voltage and moderate current semiconductor switching tasks. Packaged in a robust TO-220 3-pin through-hole form factor, this MOSFET supports a maximum continuous drain current of 1.4 amperes and maximum drain-source voltage of 1000 volts, making it well suited for power electronics including industrial control systems, power supplies, and automotive electronic circuits.
This device features enhancement mode channel operation optimized for efficient switching, coupled with a low maximum drain-source resistance of 11 ohms, which minimizes conduction losses and enhances energy efficiency. The MOSFET offers a maximum power dissipation capability of 54 watts ensuring stable operation under high thermal load within its maximum operating temperature of 150°C and a minimum temperature threshold of -55°C, thereby supporting demanding environmental conditions.
The typical gate charge of 38 nano-coulombs at Vgs allows for fast switching responses, essential for modern electronic designs requiring rapid signal processing. The gate-source voltage tolerance ranges between -20 to +20 volts, affording robust gate drive capabilities while ensuring device protection. The device exhibits a forward voltage drop of 1.5 volts supporting effective forward conduction.
The compact height of 9.01 mm, length of 10.41 mm, and width of 4.7 mm contribute to a space-efficient footprint ideal for compact PCB layouts. This MOSFET has no specific standards or approvals and does not conform to automotive standards, making it primarily suitable for general electronic and industrial applications.
Application areas include industrial machines, laboratory equipment, electrical power systems, and commercial electronic devices. Its through-hole mounting style facilitates easy replacement and prototyping on standard PCBs.
Enhancement mode N-Channel MOSFET designed for high voltage applications. Supports a maximum drain current of 1.4 amperes for continuous operation. Voltage rating up to 1000 volts ensures reliability in demanding circuits.
Compact TO-220 through-hole package with three pins for easy integration. Maximum power dissipation is rated at 54 watts for thermal stability. Wide operating temperature range from -55°C to 150°C enhances durability. Low maximum drain-source resistance of 11 ohms minimizes energy losses.
Typical gate charge of 38 nC offers efficient switching performance. Maximum gate-source voltage ranges from -20 to +20 volts, providing strong gate control. Forward voltage of 1.5 V supports rapid conduction in circuits.
Explore more Vishay semiconductor components and electronic parts available in the Electronics & Electricals category on EnvMart for your industrial and lab needs.
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