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Vishay P-Channel MOSFET TO-220 Package, 200 V, 1.8 A, Enhancement Mode, 3-Pin IRF9610PBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF9610PBF
Width 4.7mm
Mount Type Through Hole
Series IRF
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1.8A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 3Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -5.8V
P-channel MOSFET,IRF9610 1.8A 200VBrand Vishay

Key Features

  • Operates in enhancement mode with 200 V maximum drain-source voltage.
  • Continuous drain current rating of 1.8 A for moderate power handling.
  • 3-pin TO-220 package supports easy through-hole mounting.
  • Low maximum drain-source resistance of 3 ohms reduces conduction losses.
  • Maximum power dissipation rating is 2 W for reliable operation.
  • Wide operating temperature range from -55°C to 150°C.
  • Typical gate charge of 11 nC enables efficient switching.
  • Maximum gate-source voltage tolerance ranges from -20 V to +20 V.

Product Description

Vishay IRF9610PBF is a P-Channel MOSFET transistor packaged in a TO-220AB case, widely used in commercial and industrial applications requiring efficient power switching.

It features enhancement mode operation with a continuous drain current rating of 1.8 A and a maximum drain-source voltage rating of 200 V, suitable for moderate power electronic circuits and control systems.

This device comes in a 3-pin through-hole package that facilitates easy mounting and provides excellent thermal dissipation capabilities, making it ideal for power management tasks.

The MOSFET exhibits low on-state resistance (maximum 3 ohms) combined with high transconductance and rugged device durability, which ensures reliable switching performance and reduced energy losses.

Vishay IRF9610PBF operates effectively within a wide temperature range from -55°C to 150°C, making it suitable for varied environments including automotive, industrial automation, and power regulation systems.

Typical gate charge at the gate-source voltage is 11 nC, offering fast switching and low gate drive power consumption. Its maximum gate-source voltage tolerance of -20 V to +20 V allows flexible drive conditions in circuit design.

The device dimensions are compact, with a length of 10.41 mm, width of 4.7 mm, and height of 9.01 mm, optimizing space usage on circuit boards. The P-Channel MOSFET is ideal for power switching, motor control, and power supply regulation applications.

Its design supports dynamic dv/dt tolerance and easy paralleling to enhance current handling capability. The TO-220AB package is universally preferred in power electronics for dissipating up to approximately 50 W of power.

Through-hole mounting ensures mechanical stability and reliable electrical connections. The transistor delivers efficient energy management with minimized losses and robust performance. This Vishay MOSFET is a standard component for electronic engineers designing power control circuits in industrial, laboratory, HVAC, and manufacturing sectors.

Explore Vishay and related MOSFET products on EnvMart to find robust semiconductor solutions tailored to your technical requirements.

Vishay P-Channel MOSFET TO-220 Package, 200 V, 1.8 A, Enhancement Mode, 3-Pin IRF9610PBF
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Frequently Asked Questions

The maximum drain-source voltage for this model is 200 V.

It has a continuous drain current rating of 1.8 A.

This device is packaged in a TO-220AB case, which supports through-hole mounting.

The maximum power dissipation rating is 2 W.

The typical gate charge at the gate-source voltage is 11 nC.

The maximum gate-source voltage tolerance ranges from -20 V to +20 V.

The dimensions are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

It operates within a temperature range from -55°C to 150°C.

The maximum drain-source resistance is 3 ohms.

This P-Channel MOSFET is suitable for power switching, motor control, and power supply regulation applications.

This model has a 3-pin configuration.

It uses a P-channel type channel, operating in enhancement mode.

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