Vishay P-Channel MOSFET, 11 A Drain Current, 200 V Drain-Source Voltage, Enhancement Mode, TO-220 Package IRF9640PBF

Vishay IRF9640PBF is a high-performance P-Channel MOSFET designed for electronic and power management applications. This enhancement mode MOSFET is engineered to handle a maximum continuous drain current of 11 A with a maximum drain-source voltage of 200 V. Packaged in a 3-pin TO-220 format, it supports through-hole mounting suitable for a broad range of circuit board designs.

This device features a low maximum drain-source resistance of 500 milliohms, which contributes to reduced power losses and improved efficiency in switching and amplification tasks. It can dissipate up to 125 watts of power, making it appropriate for use in power supplies, motor controls, and other industrial electronics.

The IRF9640PBF operates reliably across a wide temperature range from -55° to 150°C, ensuring durability in demanding environments. The typical gate charge of 44 nC allows for responsive switching behavior while handling gate-source voltages from -20 V to +20 V. The forward voltage rating of -5 V facilitates efficient conduction when activated.

Physically, the MOSFET measures 9.01 mm in height, 10.41 mm lengthwise, and 4.7 mm in width, providing a compact form factor that aids in space-constrained designs. This product does not have special standards or automotive approvals but stands as a versatile power semiconductor component for industrial, commercial, and laboratory electronics applications.

Its construction and thermal ratings make it suitable for use in power management, electronic circuits, switching devices, and other semiconductor roles within manufacturing, industrial controls, and electronic devices.

Choose Vishay IRF9640PBF for reliability and efficiency in your semiconductor component needs. Discover more about semiconductor components and MOSFET offerings on EnvMart. Operates with a maximum drain current of 11 amperes.

Has a drain-source voltage rating of up to 200 volts. Features a low drain-source resistance of 500 milliohms. Designed for through-hole mounting in a TO-220 package with 3 pins. Maximum power dissipation rating of 125 watts for efficient heat management.

Operating temperature range from -55°C to 150°C. Typical gate charge of 44 nanocoulombs at gate-source voltage. Maximum gate-source voltage tolerance between -20 and +20 volts. Forward voltage of -5 volts supports effective switching performance.

Compact dimensions: height 9.01 mm, length 10.41 mm, width 4.7 mm.