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Vishay N-Channel Power MOSFET 200 V, 18 A, 125 W TO-220 Through Hole 3-Pin Enhancement IRF640PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF640PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF640 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| N-channel MOSFET,IRF640 18A 200VBrand | NEUTRAL |
| N-channel MOSFET,IRF640 18A 200V 50pcsBrand | Vishay |
Key Features
- Maximum power dissipation of 125 W ensures effective heat handling.
- Three-pin TO-220 package supports through-hole mounting for easy installation.
- Enhancement channel mode with a maximum drain source resistance of 180 mΩ.
- Wide operating temperature range from -55°C to 150°C for robust performance.
- Maximum gate source voltage of ±20 V enables reliable switching.
- Compact dimensions of 10.41 mm length, 9.01 mm height, and 4.7 mm width.
- Typical gate charge of 70 nC at Vgs for efficient gate drive.
- Ideal for power management, switching, and amplification in electronic circuits.
Product Description
Vishay IRF640PBF is an N-Channel Power MOSFET designed for robust electronic component applications requiring 200 V maximum drain-source voltage and 18 A continuous drain current. This device operates in enhancement mode and is packaged in the standard TO-220 format with through-hole mounting.
The MOSFET features a maximum power dissipation rating of 125 W, allowing it to handle substantial power loads in demanding environments. Its maximum drain-source resistance (Rds(on)) is 180 mΩ, ensuring efficient switching performance.
Operating temperatures range widely from -55°C to 150°C, making it suitable for diverse industrial, automotive, and commercial electronics applications. With a maximum gate-source voltage of ±20 V and a typical gate charge of 70 nC at Vgs, the IRF640PBF provides reliable switching characteristics.
The compact dimensions (length 10.41 mm, height 9.01 mm, width 4.7 mm) facilitate seamless integration in circuit boards where space is a premium. Its three-pin configuration adheres to standard MOSFET pinouts for source, gate, and drain connections.
This Power MOSFET is ideal for use in power supply regulation, motor drivers, inverters, and switching applications within industrial electronics, automotive systems, and laboratory equipment.
Maximum continuous drain current: 18 A. Drain-source voltage rating: 200 V. Enhancement channel mode ensures efficient switching. Power dissipation capacity of 125 W suitable for heavy duty use. TO-220 package supports reliable through-hole mounting.
Wide operating temperature range for harsh environments. Low gate charge facilitates fast switching speeds. Suitable for industrial, commercial, and automotive electronics. High mechanical robustness granted by compact physical size.
Standard 3-pin configuration for straightforward electronic design. Explore a wide range of Power MOSFETs and semiconductor components at EnvMart to support your industrial, commercial, and research projects.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 200 V.
It has a maximum continuous drain current rating of 18 A.
The maximum power dissipation capacity is 125 W, allowing it to handle substantial power loads.
The dimensions of the TO-220 package are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
The maximum gate-source voltage is ±20 V.
The typical gate charge is 70 nC at Vgs.
The maximum drain-source resistance (Rds(on)) is 180 mΩ.
It operates within a temperature range of -55°C to 150°C.
This model supports through-hole mounting, suitable for standard electronic designs.
It features a standard 3-pin configuration for source, gate, and drain connections.
This MOSFET is suitable for applications in power supply regulation, motor drivers, inverters, and switching applications.
It operates in enhancement channel mode, which ensures efficient switching performance.
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