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STMicroelectronics Transistor 2 A NPN 80 V 3-Pin SOT-32 BD237
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 27.5mm |
| Length | 7.8mm |
| Model | BD237 |
| Width | 2.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Power Dissipation Pd | 25W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 3MHz |
Key Features
- This transistor supports a maximum DC collector current of 2 amperes.
- Maximum collector-emitter voltage is rated at 80 volts for high-voltage applications.
- It features a through-hole mount with a compact SOT-32 package.
- The device has a power dissipation capacity of 25 watts.
- Its NPN configuration ensures standard transistor operation.
- Minimum DC current gain (hFE) is 25, providing amplification efficiency.
- Operational temperatures range from 0°C to 150°C for versatile use.
- The maximum transition frequency is 3 MHz, suitable for switching applications.
Product Description
The STMicroelectronics BD237 Transistor is a 2 A NPN bipolar transistor designed for general-purpose amplification and switching applications in electronics. Featuring a 3-pin SOT-32 through-hole package, the transistor supports a maximum collector-emitter voltage of 80 V, making it suitable for medium-power circuits.
With a maximum power dissipation of 25 W, the BD237 transistor efficiently handles substantial power loads while operating within a temperature range of 0°C to 150°C, making it reliable for industrial, automotive, and consumer electronics applications.
This transistor’s minimum DC current gain of 25 and a transition frequency of up to 3 MHz make it suitable for signal amplification and switching tasks. Its NPN polarity and single transistor configuration ensure compatibility across various circuit designs.
This transistor supports a maximum DC collector current of 2 amperes. Maximum collector-emitter voltage is rated at 80 volts for high-voltage applications. It features a through-hole mount with a compact SOT-32 package. The device has a power dissipation capacity of 25 watts.
Its NPN configuration ensures standard transistor operation. Minimum DC current gain (hFE) is 25, providing amplification efficiency. Operational temperatures range from 0°C to 150°C for versatile use. The maximum transition frequency is 3 MHz, suitable for switching applications.
Physical dimensions include a height of 27.5 mm, length of 7.8 mm, and width of 2.9 mm. Pin count is 3, conforming to standard transistor pinout.
The BD237 transistor is ideal for industrial, automotive, laboratory, and consumer electronics applications requiring reliable bipolar transistor performance in through-hole mounting configurations. It is part of a broad range of bipolar transistors offered by STMicroelectronics, catering to diverse power and switching needs.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) of the BD237 transistor is rated at 80 volts, making it suitable for high-voltage applications.
This model supports a maximum DC collector current of 2 amperes, allowing it to handle substantial power loads in various applications.
The BD237 transistor has a maximum power dissipation capacity of 25 watts, which enables it to manage significant power in circuits.
The physical dimensions of the BD237 are 27.5 mm in height, 7.8 mm in length, and 2.9 mm in width.
The operational temperature range for the BD237 is from 0°C to 150°C, making it versatile for various environments.
The minimum DC current gain (hFE) for this transistor is 25, which provides efficient amplification.
This model features a compact SOT-32 package, designed for through-hole mounting.
The maximum transition frequency for the BD237 is 3 MHz, making it suitable for switching applications.
The BD237 has a single NPN configuration, ensuring compatibility across various circuit designs.
The maximum emitter-base voltage (VEBO) for the BD237 is 5 volts.
The BD237 is suitable for general-purpose amplification and switching applications in industrial, automotive, and consumer electronics.
The BD237 transistor has a pin count of 3, conforming to standard transistor pinout configurations.
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