Vishay P-Channel MOSFET, 13.4 A Continuous Drain Current, 20 V Drain Source Voltage, 5 W Power Dissipation SI4403CDY-T1-GE3

Vishay SI4403CDY-T1-GE3 is a P-Channel MOSFET designed for high efficiency and reliable performance in electronic circuits. Featuring a maximum continuous drain current of 13.4 A and a drain source voltage rating of 20 V, it is ideal for switching and amplification in power electronics applications.

This enhancement mode MOSFET comes in a compact 8-pin SOIC surface mount package, enabling easy installation on printed circuit boards with reduced footprint. Its low drain source resistance (20 mΩ max) minimizes conduction losses, improving overall circuit efficiency.

The device supports a maximum power dissipation of 5 W, allowing it to handle moderate power loads effectively. Operating temperature range is from -55°C to 150°C making it suitable for automotive, industrial, and commercial environments that require reliable thermal performance.

Its gate source voltage range of -8 V to +8 V ensures proper gate control and protection, while the typical gate charge of 60 nC supports fast switching speeds for efficient signal processing.

Dimensions of the MOSFET are compact, measuring 5 mm in length, 4 mm in width, and 1.55 mm in height, enabling use in space-constrained assemblies. Applications include power management, load switching, DC-DC converters, and protection circuits in industrial, automotive, telecommunications, and consumer electronics fields.

Maximum continuous drain current of 13.4 A. Drain source voltage rating of 20 V. Enhancement mode P-Channel MOSFET. 8-pin SOIC surface mount package. Max power dissipation of 5 W. Operating temperature range from -55°C to +150°C.

Gate source voltage tolerance of -8 V to +8 V. Compact dimensions: 5 mm × 4 mm × 1.55 mm. Typical gate charge of 60 nC. Low maximum drain source resistance of 20 mΩ. Explore a wide range of MOSFETs and semiconductor components at EnvMart for your industrial and electronic design needs.