Infineon OptiMOS N-Channel MOSFET, 1.8 A Drain Current, 100 V Drain Source Voltage, 1.8 W Power BSP372NH6327XTSA1

Infineon BSP372NH6327XTSA1 is a highly reliable OptiMOS N-Channel MOSFET designed for electronic applications requiring compact size and efficient high-voltage switching. It offers a maximum continuous drain current of 1.8 A and can withstand a maximum drain-source voltage of 100 V, making it suitable for a range of automotive and industrial electronics.

The device features an enhancement channel mode with a 270 milliohm maximum drain-source resistance (Rds(on)), which minimizes conduction losses and improves energy efficiency in power circuits. Its typical gate charge of 9.5 nC allows for fast switching speeds, contributing to responsive control in power management systems.

Housed in a surface-mount SOT-223 package, the MOSFET balances a compact footprint with a larger thermal tab for effective heat dissipation. The component can operate across a wide ambient temperature range from -55°C up to 150°C, supporting durability in extreme environmental conditions. The ±20 V gate-source voltage rating enables a flexible gate drive interface design, ensuring compatibility with various controller circuits.

Designed to meet automotive standard AEC-Q101, this MOSFET is suited for rugged automotive electronic subsystems, as well as general-purpose switching in industrial control boards. Applications include DC-DC conversion in power modules, motor driver circuits requiring high-voltage switching, and battery management and charging systems where efficient switching is critical.

The BSP372NH6327XTSA1’s forward voltage of 1.1 V supports optimized efficiency in switching operations. Its compact dimensions (Length: 6.5 mm, Width: 3.5 mm, Height: 1.6 mm) integrate well in modern electronic assemblies prioritizing space savings.

Offers 270 milliohm maximum drain-source resistance for reduced conduction losses. Supports up to 1.8 watts of power dissipation in a compact SOT-223 package. Operates reliably within a temperature range of -55°C to 150°C.

Features a typical gate charge of 9.5 nanocoulombs for fast switching response. Designed for N-channel enhancement mode operation with 4 pins for easy PCB mounting. Gate-to-source voltage rating is ±20 volts allowing flexible gate drive designs.

Complies with automotive standard AEC-Q101 for rugged application suitability. Ideal for automotive electronic subsystems, DC-DC converters, motor drivers, and battery management circuits. Compact SOT-223 package supports easy soldering with enhanced thermal dissipation via large tab.

Forward voltage drop is 1.1 volts facilitating efficient switching performance.

This Infineon OptiMOS MOSFET combines reliable performance and rugged design for demanding industrial and automotive environments. Explore more electronic components and MOSFET devices on EnvMart for your next engineering project.