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Infineon OptiMOS-T2 N-Channel MOSFET 50 A 40 V Enhancement Mode, 3-Pin TO-252 IPD50N04S408ATMA1

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Infineon OptiMOS-T2 N-Channel MOSFET 50 A 40 V Enhancement Mode, 3-Pin TO-252 IPD50N04S408ATMA1

Name: Infineon OptiMOS-T2 N-Channel MOSFET 50 A 40 V Enhancement Mode, 3-Pin TO-252 IPD50N04S408ATMA1
Brand: Infineon
SKU: 184420
Price: 0.44 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.3mm
Length	6.5mm
Model	IPD50N04S408ATMA1
Width	6.22mm
Mount Type	Surface
Series	OptiMOS-T2
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	50A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	7.9mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	46W
Typical Gate Charge Qg @ Vgs	17.2nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Features an enhancement-mode N-channel for straightforward gate control.
Maximum continuous drain current of 50 A enables heavy current switching applications.
Low drain source resistance of 7.9 milliohm reduces conduction losses improving efficiency.
Typical gate charge of 17.2 nC enhances switching speed and performance.
Maximum power dissipation of 46 W supports high thermal loads during operation.
Operates reliably between -55°C to 175°C ambient temperature for diverse environments.
Compact 3-pin TO-252 surface-mount package facilitates effective PCB thermal management.
Compliance with automotive standard AEC-Q101 ensures robust automotive applications.

Product Description

Infineon IPD50N04S408ATMA1 is an OptiMOS-T2 series N-Channel MOSFET engineered for high current switching in compact surface-mount form factor. It supports a maximum continuous drain current of 50 amperes and a drain source voltage of 40 volts, operating efficiently across a wide temperature range from -55°C to 175°C. This enhancement-mode transistor provides reliable conduction with a low drain source resistance of 7.9 milliohm, minimizing power losses and heat generation during high-load operation.

The 3-pin TO-252 package offers a compact layout with an effective thermal path to the PCB, aiding efficient heat dissipation crucial for sustaining peak power dissipation of 46 watts. The MOSFET’s gate features a typical charge of 17.2 nC which allows rapid switching transitions, enhancing overall performance in power management circuits. The device’s maximum gate source voltage rating of ±20 volts ensures protection against overvoltage conditions while maintaining reliable control.

This MOSFET conforms to the automotive AEC-Q101 standard, reflecting its robustness for automotive power distribution, motor drive half-bridge circuits, and high-current DC-DC converters. Its low forward voltage of 1.2 V contributes to high efficiency in synchronous buck converter output stages and industrial control units.

Enhancement-mode N-channel for direct gate drive control. 50 A continuous drain current supports demanding current requirements. 7.9 mΩ Rds(on) for improved conduction efficiency. 17.2 nC gate charge for faster switching capabilities.

46 W maximum power dissipation for thermal endurance. Operating temperature range from -55°C to 175°C for harsh environments. 3-pin TO-252 package with surface mount footprint. Automotive grade meeting AEC-Q101 standard.

Ideal for automotive power stages and industrial applications. Explore the extensive range of MOSFETs and power semiconductors at EnvMart for your electronic component requirements.