onsemi NPN Transistor, 16 A Collector Current, 250 V Collector Emitter Voltage, 200 W Power Dissipation, TO-3BPL MJL21194G

onsemi MJL21194G NPN Transistor is a high-performance power transistor designed for industrial, electronic, and power amplification applications with a maximum collector current of 16 A and collector emitter voltage of 250 V.

This transistor uses a TO-3BPL package type with a sturdy through-hole mount format, providing mechanical stability and efficient heat dissipation suitable for power electronics and amplifier circuits.

The device features a maximum power dissipation of 200 W, making it capable of handling significant power loads while maintaining thermal stability. It has an NPN polarity and single transistor configuration ideal for switching and amplification.

Rated for operation over a wide temperature range from -65°C to 150°C, it ensures dependable performance even under harsh environmental conditions. The transistor exhibits a minimum DC current gain (hFE) of 25 and can tolerate a maximum collector base voltage of 400 V and emitter base voltage of 5 V.

Maximum DC collector current of 16 amps. Collector emitter voltage rating of 250 volts. TO-3BPL package for robust through-hole mounting. NPN transistor configuration with 3 pins. Power dissipation capacity of 200 watts.

Wide operating temperature range from -65°C to 150°C. Minimum DC current gain of 25. Maximum transition frequency of 1 MHz. This product is ideal for industrial power amplification, electronic control systems, and manufacturing applications requiring reliable high-power transistors.

Country of origin is China. The product is categorized under Bipolar Transistors suitable for industrial and electronic design professionals seeking robust semiconductors. Explore more high-quality Bipolar Transistors and semiconductors on EnvMart for all your electronic component needs.