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Infineon IPT N-Channel MOSFET 400 A, 800 V, 8-Pin TO-263 Surface Mount IPT020N10N5ATMA1

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Infineon IPT N-Channel MOSFET 400 A, 800 V, 8-Pin TO-263 Surface Mount IPT020N10N5ATMA1

Name: Infineon IPT N-Channel MOSFET 400 A, 800 V, 8-Pin TO-263 Surface Mount IPT020N10N5ATMA1
Brand: Infineon
SKU: 179166
Price: 3.5 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPT020N10N5ATMA1
Mount Type	Surface
Series	IPT
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	400A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	1.2mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Supports high current loads up to 400 A for heavy power switching.
Maximum drain-source voltage of 800 V suitable for high-voltage applications.
Manufactured in 8-pin TO-263 surface-mount package for easy PCB mounting.
Low on-resistance of 1.2 milliohms minimizes conduction losses and enhances efficiency.
Capable of handling power dissipation up to 81 W for reliable thermal management.
Typical gate charge of 80 nC allows rapid switching transitions.
Maximum gate-source voltage rating of 20 V offers flexible gate control.
Reliable operation over a wide temperature range from -55°C to 175°C.

Product Description

Infineon IPT020N10N5ATMA1 is a high-voltage N-Channel MOSFET specifically engineered for power switching in industrial and automotive electronic circuits. Featuring a maximum continuous drain current of 400 A and a drain-source voltage rating of 800 V, it supports high current loads and high-voltage switching tasks efficiently.

The device features a surface-mount 8-pin TO-263 package ideal for compact PCB designs while maintaining robust heat dissipation. Its very low on-resistance (Rds(on)) of 1.2 milliohms reduces power losses during conduction, enabling improved energy efficiency in switching circuits.

Designed to handle power dissipation up to 81 W, this MOSFET supports sustained operation under demanding thermal conditions. Its typical gate charge of 80 nanocoulombs facilitates rapid switching speeds, enhancing circuit performance in high-frequency applications.

With a gate voltage rating of 20 V and an operating temperature range from -55°C up to 175°C, the IPT020N10N5ATMA1 delivers reliability across a wide range of environments and use cases. It is RoHS-compliant, ensuring adherence to restricted substance regulations, and meets the automotive AEC-Q101 standard making it suitable for vehicle electronics.

Applications include traction inverters, high-voltage motor drives, industrial power supplies, energy storage systems, and on-board power electronics requiring durable and efficient switching components. The device is ideal for use with thermal management solutions on surface-mount assemblies.

Supports heavy current loads up to 400 A. High-voltage switching capability at 800 V rating. Low on-resistance reduces conduction losses. Compact 8-pin TO-263 surface-mount package. Capable of dissipating 81 W thermal load.

Rapid switching enabled by 80 nC gate charge. Wide operating temperature range: -55°C to 175°C. RoHS-compliant and AEC-Q101 automotive qualified.

Choose Infineon IPT020N10N5ATMA1 for reliable, efficient Power MOSFET solutions in demanding electronic and automotive industrial applications. Explore the Electronics & Electricals category on EnvMart for more semiconductor components.