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Infineon N-Channel MOSFET, 192 A, 40 V, 8-Pin PQFN Surface Mount Power MOSFET IRFH8318TRPBF

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Infineon N-Channel MOSFET, 192 A, 40 V, 8-Pin PQFN Surface Mount Power MOSFET IRFH8318TRPBF

Name: Infineon N-Channel MOSFET, 192 A, 40 V, 8-Pin PQFN Surface Mount Power MOSFET IRFH8318TRPBF
Brand: Infineon
SKU: 179075

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IRFH8318TRPBF
Mount Type	Surface
Series	IRFH
Maximum Operating Temperature	175°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	192A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Optimized for low RDS(on) and high current capability.
Designed for low frequency applications requiring ruggedness.
Suitable for DC motors, battery management systems, inverters, and DC-DC converters.
Low thermal resistance to PCB ensuring efficient heat dissipation.
Low profile surface mount package for compact designs.
Maximum drain-source resistance of 0.7 milliohms enhances efficiency.
Maximum power dissipation rating of 81 W for robust performance.
Supports automotive standard AEC-Q101 for reliability.

Product Description

Infineon IRFH8318TRPBF is a high-performance N-Channel Power MOSFET that is engineered to provide a maximum continuous drain current of 192 A and can withstand up to 40 V drain-source voltage. It comes in a compact 8-pin PQFN surface-mount package well-suited for space-constrained applications.

This device is optimized to deliver low RDS(on) resistance of just 0.7 milliohms, enabling enhanced current efficiency and reduced conduction losses. Its typical gate charge of 80 nC at 8 V gate drive makes it suitable for switching applications with efficient control.

Designed for ruggedness and long-term reliability, the MOSFET operates over an ambient temperature range of -55°C to 175°C, complying with automotive standards AEC-Q101, thus making it a suitable choice for automotive and industrial power electronics.

With a maximum power dissipation of 81 W and low thermal resistance to PCB (< 1.7°C/W), it ensures effective heat management in compact board layouts. The 8-pin PQFN package also contributes to a low profile design, ideal for applications where space is limited.

Common applications include DC motor drives, battery management systems, inverters, and DC-DC converters where reliability and efficiency are critical. Optimized for low RDS(on) and high current capability. Applications include DC motors, battery management systems, and inverters.

Low thermal resistance to the PCB ensures reliable operation. Compliant with RoHS and automotive AEC-Q101 standards. Wide operating temperature range from -55°C to 175°C. Explore more Infineon MOSFETs and discrete semiconductor products on EnvMart for industrial and automotive power electronics solutions.