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Infineon N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 0.7mΩ Rds(on), 8-Pin BSC0504NSIATMA1

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Infineon N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 0.7mΩ Rds(on), 8-Pin BSC0504NSIATMA1

Name: Infineon N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 0.7mΩ Rds(on), 8-Pin BSC0504NSIATMA1
Brand: Infineon
SKU: 179070
Price: 2.01 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BSC0504NSIATMA1
Mount Type	Surface
Series	BSC
Maximum Operating Temperature	+150°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	381A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Maximum continuous drain current of 381 A for high power handling.
Drain-source voltage rating of 40 V suitable for low-voltage switching.
Low on-resistance of 0.7 milliohms to minimize conduction losses.
Surface-mount 8-pin SuperSO8 package with 5 x 6 mm footprint.
Power dissipation capability up to 81 W for heavy-duty operation.
Typical gate charge of 80 nC ensuring predictable switching performance.
Gate-source voltage tolerance of ±20 V for robust drive margins.
Operating temperature range from -55°C to +150°C suitable for industrial environments.

Product Description

Infineon BSC0504NSIATMA1 is a surface-mount N-channel power MOSFET designed for efficient high-current switching in low-voltage systems. With an impressive maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V, it supports demanding power applications across a wide temperature range from -55°C to +150°C.

This MOSFET comes in a compact 8-pin SuperSO8 package with a 5 x 6 mm footprint, optimized for surface mounting on PCBs. Featuring a low on-resistance of just 0.7 milliohms, it minimizes conduction losses and improves overall system efficiency.

The device exhibits a typical gate charge of 80 nC, enabling predictable and efficient switching transitions. It tolerates gate-source voltages up to ±20 V, ensuring robust drive margins for reliable operation in harsh conditions.

Power dissipation capability is rated at 81 W, allowing for heavy-duty operation in industrial, laboratory, telecommunications, and computing power supply applications. The MOSFET is RoHS compliant, affirming environmentally responsible manufacturing practices.

Typical applications include synchronous rectification in power supplies, low-voltage DC-DC converters, high-current motor drive stages, server power distribution modules, and compact surface-mount power assemblies. It is well-suited for use in industrial, laboratory, and commercial electronic systems requiring efficient, high-current switching.

Maximum continuous drain current of 381 A for high power handling. Drain-source voltage rating of 40 V for low-voltage switching. Low on-resistance of 0.7 milliohms to reduce conduction losses. Compact 8-pin SuperSO8 package for surface mount applications.

Power dissipation rating of 81 W for demanding operations. Typical gate charge of 80 nC for efficient switching control. Gate tolerance of ±20 V for robust drive. Operating temperature from -55°C to +150°C for wide environmental range.

RoHS compliant for environmental safety. Ideal for DC-DC converters, power supplies, motor drives, and server power modules. Discover this high-performance MOSFET and explore related electronic components at EnvMart for your industrial and commercial electronic design projects.

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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 381 A, making it suitable for high power handling applications.

This model has a drain-source voltage rating of 40 V, which is suitable for low-voltage switching applications.

The on-resistance of this MOSFET is 0.7 milliohms, which helps minimize conduction losses.

It has a power dissipation capability of up to 81 W, allowing for heavy-duty operation in demanding applications.

The typical gate charge for this model is 80 nC, ensuring predictable switching performance.

This device operates within a temperature range of -55°C to +150°C, making it suitable for industrial environments.

It comes in a compact 8-pin SuperSO8 package with a footprint of 5 x 6 mm, optimized for surface mounting.

The maximum gate-source voltage tolerance for this model is ±20 V, providing robust drive margins for reliable operation.

This MOSFET is suitable for applications such as synchronous rectification in power supplies, low-voltage DC-DC converters, and high-current motor drive stages.

Yes, this MOSFET is RoHS compliant, affirming environmentally responsible manufacturing practices.

The channel type of this MOSFET is N-channel, which is commonly used for high-current switching applications.

The forward voltage of this MOSFET is 1 V, which is relevant for its switching characteristics.