Infineon N-Channel Power MOSFET 192 A 40 V 8-Pin PQFN IRFH8318TRPBF

The Infineon IRFH8318TRPBF is a high-performance N-Channel Power MOSFET designed for demanding electronic components and power applications.

Featuring a maximum continuous drain current of 192 A and drain-source voltage of 40 V, it is built for efficiency in DC motor drives, battery management systems, inverters, and DC-DC converters.

This device utilizes a low on-resistance of 0.7 mΩ, which minimizes conduction losses and improves thermal management with a maximum power dissipation rating of 81 W. The device comes in a surface mount 8-pin PQFN package, providing a compact and low-profile form factor ideal for modern electronics.

The gate charge is optimized at 80 nC typical, allowing for fast switching speeds and better efficiency in switching regulators and power management.

Operating across a wide temperature range of -55°C to 175°C, the MOSFET is rugged and suitable for automotive-grade applications, meeting the AEC-Q101 standard and RoHS compliance for environmental safety.

Maximum continuous drain current of 192 A ensures high current capacity. 40 V maximum drain-source voltage supports various power circuits. Low RDS(on) of 0.7 mΩ reduces power losses. 8-pin PQFN package for surface mounting.

Typical gate charge of 80 nC enables rapid switching. Maximum power dissipation up to 81 W for thermal reliability. Wide operating temperature range from -55°C to 175°C. Forward voltage of 1 V suitable for low voltage drop use cases.

Meets automotive standard AEC-Q101 and is RoHS compliant. This MOSFET is suitable for industrial, electronic manufacturing, automotive, power conversion, and energy management applications. Browse Infineon power semiconductor components and MOSFETs in the EnvMart catalog for reliable and high-performance solutions.