Infineon P-Channel MOSFET, 273 A Maximum Continuous Drain Current, 100 V Drain-Source Voltage, 3-Pin TO-263 IPB110P06LMATMA1

Infineon IPB110P06LMATMA1 is a P-Channel MOSFET engineered for high-current, high-voltage switching and power conversion in industrial and electronic applications. It features a maximum continuous drain current rating of 273 A and a maximum drain-source voltage of 100 V, making it suitable for power modules requiring robust handling of heavy electrical loads.

The device comes in a surface-mount TO-263 package with 3 pins, enabling compact mounting on printed circuit boards (PCBs) and facilitating efficient thermal management through appropriate heat sinking. Its very low on-resistance of 1.7 mΩ significantly reduces conduction losses, boosting overall efficiency.

This MOSFET can dissipate up to 81 W of power, allowing it to operate effectively in demanding thermal and transient load conditions. The gate charge of 80 nC at specified voltages ensures responsive and fast switching performance. It operates reliably across a wide temperature range from -55°C to 175°C, accommodating cold start-ups and elevated temperature environments typical in industrial and automotive electronics.

Gate-source voltage must be limited to ±20 V to avoid damaging the gate structure. The forward voltage of 1.1 V characterizes conduction under operating load and drive conditions. The component adheres to RoHS standards, promoting environmentally sustainable electronic manufacturing.

Applications include synchronous rectification in power supplies, downstream stages in motor drives requiring high current, high-voltage DC-DC converter switches, and integration in compact surface-mount power modules. The MOSFET is also suitable for fast switching in transient load scenarios.

Maximum continuous drain current: 273 A for high-load operation. Drain-source voltage of 100 V allows for elevated voltage applications. 3-pin TO-263 surface mount package for compact and reliable mounting. Low Rds(on) of 1.7 mΩ minimizes loss and heat generation.

81 W power dissipation supports demanding thermal conditions. Wide temperature operating range from -55°C to 175°C. 80 nC typical gate charge enables efficient switching. Gate-source voltage ±20 V protection. RoHS compliant for reduced environmental impact.

Optimized for industrial, automotive electronics, and power management systems. Explore more MOSFETs and power semiconductor devices at EnvMart for your industrial and electronic project needs.