Infineon N-Channel Power MOSFET 84 A 40 V TO-220 3-Pin Surface Mount IPA60R180P7XKSA1

Infineon IPA60R180P7XKSA1 is a high-reliability N-Channel power MOSFET designed for power electronics applications requiring efficient switching and robust current handling. Packaged in a TO-220 form factor with 3 pins, this MOSFET supports surface mounting technology and provides a maximum continuous drain current of 84 A at 40 V drain-source voltage. It operates efficiently over a temperature range of -55°C to 175°C, making it suitable for demanding industrial and automotive environments.

The device features a low drain-source resistance of 2.9 milliohms, minimizing conduction losses and improving overall system efficiency. With a typical gate charge of 80 nC at gate-source voltage, it supports fast switching in both hard and soft switching topologies such as power factor correction (PFC) and LLC resonant converters. The maximum power dissipation of 81 W allows effective thermal management in compact assemblies.

This MOSFET is engineered to reduce switching and conduction losses significantly, enhancing energy efficiency and extending device reliability. The component's gate-source voltage tolerance of 20 V and a forward voltage drop of 1.2 V contribute to its optimal electrical performance.

Suitable for a wide range of industrial electronics, manufacturing automation, power supply designs, and automotive powertrain systems, the IPA60R180P7XKSA1 offers excellent electrostatic discharge (ESD) robustness and outstanding commutation ruggedness for reliable operation under transient load conditions.

Capable of handling maximum continuous drain current of 84 amperes. Operating voltage up to 40 volts with low drain-source resistance of 2.9 milliohms. TO-220 package with 3 pins suitable for surface mount technology. Maximum power dissipation rated at 81 watts for robust thermal management.

Wide operating temperature range from -55 to 175 degrees Celsius. Gate-source voltage maximum of ±20 volts ensures effective switching control. Typical gate charge of 80 nanocoulombs supports efficient switching performance.

Forward voltage drop of 1.2 volts enhances conduction efficiency. Compliance with RoHS standards ensures environmentally friendly manufacturing.

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