Vishay Power N-Channel MOSFET 90.5 A 100 V Depletion Mode 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3

Vishay SIDR104AEP-T1-RE3 is a Gen IV TrenchFET® power N-Channel MOSFET designed for efficient switching and power control in demanding electronic applications. This device supports a maximum continuous drain current of 90.5 A and a drain-source voltage rating of 100 V, with a depletion channel mode optimized for power supply and motor drive control circuits.

Packaged in a compact 8-Pin PowerPAK SO-8DC surface mount package, it provides low on-resistance of 0.0021 ohms to minimize conduction losses and improve efficiency. The device offers a maximum power dissipation of 120 W, suitable for high power environments, and operates reliably in extended temperature ranges from -55°C to 125°C.

Additional electrical characteristics include a maximum gate-source voltage of 20 V and typical gate charge of 46.1 nC, supporting fast and efficient switching performance. The MOSFET conforms to the AEC-Q101 automotive standard, ensuring robust reliability for automotive and industrial applications.

With its small form factor of 6.15 mm length and 5.15 mm width, the MOSFET supports compact PCB designs. Its forward voltage is 1.2 V, aiding in efficient power conversion and synchronous rectification processes.

This Vishay MOSFET is ideal for power supply circuits, motor drives, and synchronous rectification in industrial, automotive, and commercial electronics. It is engineered to deliver superior performance and thermal stability in rigorous operating environments.

Designed for high power switching applications up to 120 W dissipation. Low on-resistance of 0.0021 ohms ensuring minimal conduction losses. Operating temperature range from -55°C to 125°C for robust thermal performance.

Maximum gate-source voltage rating of 20 V allowing reliable control. Compact size with 6.15 mm length and 5.15 mm width for space saving PCB layouts. Automotive standard AEC-Q101 compliant for reliability in transport applications.

Typical gate charge of 46.1 nC at Vgs provides efficient switching. Forward voltage of 1.2 V supports efficient power conversion. Surface mount package type for versatile assembly options. Ideal for power supply circuits, motor control drives, and synchronous rectification.

Explore more Vishay MOSFETs and related power electronic components in the EnvMart catalog for enhanced design solutions.