World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

Toshiba N-Channel MOSFET, 2A, 40V, 3-Pin SOT-23 Surface Mount Semiconductor SSM3K339R,LF(T

Free Delivery in India | Lowest Global Shipping Charges

Toshiba N-Channel MOSFET, 2A, 40V, 3-Pin SOT-23 Surface Mount Semiconductor SSM3K339R,LF(T

Name: Toshiba N-Channel MOSFET, 2A, 40V, 3-Pin SOT-23 Surface Mount Semiconductor SSM3K339R,LF(T
Brand: Toshiba
SKU: 174547
Price: 0.24 USD
Availability: InStock



Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	800μm
Length	2.4mm
Model	SSM3K339R,LF(T
Width	2.9mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	220mΩ
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	12V
Forward Voltage Vf	-0.85V

Key Features

Designed for power management and switching applications.
Supports maximum continuous drain current of 2 amperes.
Maximum drain-source voltage is 40 volts for reliable performance.
Compact SOT-23 surface mount package with 3 pins for easy PCB integration.
Low maximum drain-source resistance of 220 milliohms ensures efficiency.
Operating temperature range from -55°C to 150°C supports harsh environments.
Maximum gate-source voltage of 12 volts enhances driving flexibility.
Typical gate charge is 1.1 nanocoulombs at Vgs, improving switching speed.

Product Description

Toshiba SSM3K339R,LF(T is a high-performance N-Channel MOSFET designed for power management and switching applications in electronic devices. The transistor features a compact 3-pin SOT-23 surface mount package enabling easy integration on PCBs in industrial, commercial, and consumer electronics.

This MOSFET supports a maximum continuous drain current of 2 amperes and a drain-source voltage rating of 40 volts, making it suitable for low to medium power applications. Its low on-resistance of 220 milliohms reduces conduction losses, enhancing overall efficiency and reliability.

The device operates effectively across a wide temperature range from -55°C to 150°C, allowing deployment in demanding environments. A maximum gate-source voltage of 12 volts and a gate charge of 1.1 nanocoulombs ensure efficient switching performance with minimized power consumption.

The maximum power dissipation of 2 watts and a forward voltage drop around -0.85 volts support stable operation in linear and switching modes. The small form factor with 2.4 mm length, 2.9 mm width, and 800 micrometer height makes it ideal for compact electronic designs.

Designed primarily for power management and switching in electronic circuits. Low gate charge facilitates fast switching with low energy loss. Wide operating temperature range supports industrial and automotive use cases.

Surface mount SOT-23 package supports automated PCB assembly. Suitable for industrial electronics, consumer devices, automotive modules, and power regulation.

This Toshiba MOSFET is RoHS compliant and does not carry automotive or additional safety certifications as standard. It offers a reliable semiconductor component solution for designers requiring efficient switching and power control devices in discrete component form.

Ideal for engineers and manufacturers in semiconductor electronics, power electronics, industrial automation, and related fields seeking a trusted N-channel MOSFET for various circuit designs. Explore additional Toshiba semiconductors and MOSFET devices in the Electronics & Electricals category at EnvMart for comprehensive component selection.