Toshiba N-Channel MOSFET, Maximum Continuous Drain Current 3.5A, Maximum Drain-Source Voltage 30V, Surface SSM3K329R,LF(T

The Toshiba SSM3K329R,LF(T is a high-performance N-Channel MOSFET designed for efficient power management switching and high-speed electronic applications. Packaged in a compact 3-pin SOT-23 surface mount body, it allows for reliable integration into modern PCB designs where space and performance are critical.

This transistor exhibits a maximum continuous drain current (Id) of 3.5 amperes and can withstand a maximum drain-source voltage (Vds) of 30 volts, making it suitable for various electronic circuits requiring moderate power handling.

With a low maximum drain-source resistance (Rds) of 289 milliohms, the device minimizes conduction losses and contributes to energy-efficient operation. The typical gate charge (Qg) of 1.5 nanocoulombs supports fast switching speeds, which is essential in power conversion and signal amplification circuits.

Operating within a broad temperature range from -55°C to 150°C, this MOSFET ensures stable performance in demanding industrial, commercial, and consumer electronics environments. Its maximum power dissipation rating of 2 watts allows reliable thermal management in compact electronic assemblies.

The forward voltage drop (Vf) of approximately -0.9 volts further optimizes conduction efficiency, making it ideal for switching regulators, amplifiers, and other power semiconductor applications.

Typical dimensions of 2.4 mm length, 2.9 mm width, and 0.8 mm height ensure it fits standard surface mount technology (SMT) footprints, simplifying automated assembly processes.

This MOSFET is widely used in electronic component manufacturing for power interfaces, industrial control systems, and related semiconductor applications. Its high-quality silicon construction by Toshiba guarantees reliability and long-term stability.

Designed for power management and high-speed switching applications. Compact SOT-23 surface mount package with 3 pins for easy PCB assembly. Maximum power dissipation rating of 2 watts ensures efficient thermal management.

Wide operating temperature range from -55°C to 150°C for reliability in harsh environments. Low maximum drain-source resistance of 289 milliohms for improved efficiency. Typical gate charge of 1.5 nanocoulombs facilitates fast switching performance.

Maximum gate-source voltage of 12 volts for robust gate control. Forward voltage of -0.9 volts optimizes conduction characteristics. Small physical dimensions enable space-saving designs and efficient PCB layout. Explore the Electronics & Electricals > Semiconductor > MOSFET category at EnvMart for additional related components and solutions by Toshiba and other leading brands.