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Infineon Triple Parallel IGBT Module 650 V AG-EASY3B F3L400R07W3S5B59BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.4mm
Length 109.9mm
Model F3L400R07W3S5B59BPSA1
Configuration Triple Parallel
Maximum Operating Temperature 150°C
Package Type AG-EASY3B
Minimum Operating Temperature -40°C
Maximum Collector Emitter Voltage Vceo 650V
Maximum Power Dissipation Pd 20mW
Maximum Gate Emitter Voltage VGEO ±20 V
Number of Transistors 6

Key Features

  • This IGBT module features a triple parallel configuration for enhanced performance.
  • Maximum collector emitter voltage is 650 V ensuring robust operation.
  • Maximum power dissipation rated at 20 mW for effective thermal management.
  • Package type AG-EASY3B supports easy and reliable integration into systems.
  • Operates within temperature range from -40°C to 150°C for versatile industrial applications.
  • Includes six transistors configured for efficient switching and power handling.
  • Maximum gate emitter voltage of ±20 V for stable gate control.
  • Compact dimensions with length of 109.9 mm and height of 16.4 mm allow space-efficient installation.

Product Description

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module 650 V AG-EASY3B is a high-performance semiconductor component optimized for industrial power electronics applications including solar power inverters and energy systems.

Designed with advanced TRENCHSTOP™ 5 IGBT technology, it provides excellent switching performance and reliability at a maximum collector emitter voltage of 650 V. This triple parallel configuration module incorporates six transistors to achieve high power efficiency and robust power dissipation characteristics, rated at 20 mW.

The module features PressFIT contact technology within the AG-EASY3B package type, allowing for simplified assembly and dependable electrical connections. It operates under a wide temperature range from -40°C to 150°C, making it suitable for harsh industrial environments.

Its compact form factor measures 109.9 mm in length and 16.4 mm in height, optimizing space utilization within power electronics assemblies. The maximum gate emitter voltage is ±20 V, facilitating stable gate control for switching operations.

This IGBT module is especially ideal for use in 1000 V DC photovoltaic systems configured in three-level NPC1 topology, supporting output power greater than 100 kVA with efficiency up to 99%. It serves applications in industrial, renewable energy, manufacturing, and HVAC sectors requiring reliable power switching solutions.

This IGBT module features a triple parallel configuration for enhanced performance. Maximum collector emitter voltage is 650 V ensuring robust operation. Maximum power dissipation rated at 20 mW for effective thermal management.

Package type AG-EASY3B supports easy and reliable integration into systems. Operates within temperature range from -40°C to 150°C for versatile industrial applications. Includes six transistors configured for efficient switching and power handling.

Maximum gate emitter voltage of ±20 V for stable gate control. Compact dimensions with length of 109.9 mm and height of 16.4 mm allow space-efficient installation. Ideal for solar energy systems with up to 150 kVA output power capability.

Incorporates advanced TRENCHSTOP™ 5 technology with PressFIT contacts for reliability. Explore the range of Infineon IGBT Modules at EnvMart to find suitable solutions for your power electronic requirements.

Infineon Triple Parallel IGBT Module 650 V AG-EASY3B F3L400R07W3S5B59BPSA1
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