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STMicroelectronics N-Channel Power MOSFET 180 A 100 V Enhancement 3-Pin H2PAK-2 STH200N10WF7-2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STH200N10WF7-2 |
| Mount Type | Surface |
| Series | STH200 |
| Maximum Operating Temperature | 175°C |
| Package Type | H2PAK-2 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 340W |
| Typical Gate Charge Qg @ Vgs | 93nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Utilizes STripFET F7 technology for superior linear mode withstanding capability.
- Features extremely low on-resistance ensuring energy efficiency.
- Supports maximum continuous drain current of 180 A for high power applications.
- Designed with a surface mount 3-pin H2PAK-2 package for efficient heat dissipation.
- Maximum power dissipation rating of 340 W accommodates demanding industrial environments.
- Operating temperature range spans from -55°C to 175°C ensuring reliability in harsh conditions.
- Gate-source voltage tolerance up to 20 V safeguarding device integrity.
- Typical gate charge of 93 nC supports fast switching applications.
Product Description
STMicroelectronics STH200N10WF7-2 is a robust N-Channel Power MOSFET designed to meet high current and voltage requirements with a maximum continuous drain current of 180 A and a drain-source voltage of 100 V. The device employs the advanced STripFET F7 technology which combines an enhanced trench gate structure to boost linear mode performance and improve switching efficiency.
The MOSFET comes in a compact 3-pin H2PAK-2 surface mount package, providing excellent thermal management and enabling integration into dense electronic assemblies. With a power dissipation capacity of 340 W and a wide operating temperature range from -55°C to 175°C, it is well suited for use in industrial electronics, power converters, and motor control circuits.
This device exhibits very low on-resistance of 4 milliohms, which significantly reduces conduction losses and enhances energy efficiency. Its gate-source voltage maximum rating of 20 V and typical gate charge of 93 nC allow for fast and reliable switching in high-frequency circuits.
The 1.2 V forward voltage contributes to low forward conduction losses, making this MOSFET ideal for power supply designs and other high-current DC applications. The part does not have automotive certification but provides best-in-class surge current capability and superior safe operating area (SOA) characteristics.
Utilizes STripFET F7 technology for enhanced performance. Excellent surge current handling and SOA tolerance. Low on-state resistance of 4 milliohms. Maximum power dissipation of 340 W supports high power handling. Wide operating temperature range from -55°C to 175°C.
3-pin H2PAK-2 package ensures efficient thermal dissipation. Gate charge optimized for rapid switching. Reliable device for industrial, laboratory, and manufacturing applications. Improves production efficiency with surface mount installation.
This Power MOSFET is highly suitable for industrial power management systems, motor drives, and high power switching applications. Engineers can rely on its performance and robust electrical properties for demanding electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for the STH200N10WF7-2 is 180 A, making it suitable for high power applications.
This model has a maximum drain-source voltage rating of 100 V, which is essential for various power applications.
The on-resistance of this MOSFET is 4 milliohms, contributing to reduced conduction losses and improved energy efficiency.
The STH200N10WF7-2 comes in a surface mount 3-pin H2PAK-2 package, which supports efficient thermal dissipation.
It operates within a temperature range of -55°C to 175°C, ensuring reliability in harsh conditions.
The maximum power dissipation rating for this MOSFET is 340 W, accommodating demanding industrial environments.
The typical gate charge is 93 nC, which supports fast switching applications.
The maximum gate-source voltage tolerance for this model is 20 V, which helps safeguard device integrity.
This power MOSFET is suitable for industrial power management systems, motor drives, and high power switching applications.
The forward voltage for the STH200N10WF7-2 is 1.2 V, contributing to low forward conduction losses.
This model features a 3-pin configuration, which is typical for surface mount devices.
It utilizes STripFET F7 technology, which enhances linear mode performance and improves switching efficiency.
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