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Infineon OptiMOS-T2 N-Channel MOSFET, 120 A, 80 V, Enhancement Mode, 3-Pin TO-263 IPB120N08S404ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB120N08S404ATMA1 |
| Mount Type | Surface |
| Series | OptiMOS-T2 |
| Package Type | TO-263 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 4.1mΩ |
| Channel Mode | Enhancement |
Key Features
- Employs enhancement mode for efficient switching performance.
- Packaged in a robust 3-pin TO-263 surface mount design.
- Features a low maximum drain-source resistance of 4.1 milliohms.
- AEC-Q101 qualified automotive grade component ensuring reliability.
- Operates reliably at high temperatures up to 175°C.
- 100% avalanche tested for ruggedness and durability.
- Part of the OptiMOS-T2 series optimized for next-generation voltage regulation.
- Ideal for computing and power management in industrial and automotive electronics.
Product Description
Infineon IPB120N08S404ATMA1 is a high-performance N-Channel enhancement mode MOSFET from the OptiMOS-T2 product family. Designed to meet stringent energy efficiency and power density requirements, this device supports a maximum continuous drain current of 120 A and a maximum drain-source voltage of 80 V.
The device is housed in a compact 3-pin TO-263 package optimized for surface mounting, offering excellent thermal performance and flexibility in circuit layout. Featuring a low maximum drain-source resistance of 4.1 milliohms, it provides efficient switching with minimal power loss, suitable for high-current applications.
This MOSFET is AEC-Q101 certified for automotive standards, ensuring high reliability and robustness. Rated for operation up to 175°C, it is 100% avalanche tested to withstand voltage spikes typical in automotive and industrial environments.
The OptiMOS-T2 series extends Infineon's OptiMOS line with improved performance metrics and packaging suited for compact space constraints. This component is ideal for advanced power management, voltage regulation modules, and computing applications demanding high efficiency and durable semiconductor devices.
Enhancement mode N-channel MOSFET. Maximum continuous drain current of 120 A. Drain-source voltage rating of 80 V. 3-Pin surface mount TO-263 package. Maximum drain-source resistance of 4.1 milliohms. AEC-Q101 automotive qualified.
Rated for operation up to 175°C. 100% avalanche tested for ruggedness.
This Infineon MOSFET is suitable for use in industrial, automotive, computing, and power supply applications requiring reliable and efficient power switching components. Explore more semiconductors and discrete devices in the EnvMart collection tailored to engineering and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
This MOSFET has a maximum drain-source voltage rating of 80 V.
It is housed in a 3-pin TO-263 surface mount package.
The maximum drain-source resistance is 4.1 milliohms.
This model is AEC-Q101 qualified, ensuring it meets automotive standards for reliability.
It is rated for operation up to 175°C.
This component features an enhancement mode N-channel configuration.
Yes, it is designed for high-current applications, supporting up to 120 A continuous drain current.
Being 100% avalanche tested indicates that this MOSFET can withstand voltage spikes typical in automotive and industrial environments, enhancing its ruggedness.
This model is part of the OptiMOS-T2 series, which is optimized for improved performance metrics.
It is suitable for advanced power management, voltage regulation modules, and computing applications requiring efficient power switching.
The country of origin for this MOSFET is India.
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