Vishay N-Channel MOSFET 80 V, 25.5 A, Enhancement Mode, 4-Pin SO-8 Package SiJ128LDP-T1-GE3

Vishay SiJ128LDP-T1-GE3 is a high-performance N-Channel MOSFET featuring a maximum continuous drain current of 25.5 A and a maximum drain-source voltage of 80 V. Designed with enhancement mode channel and housed in a compact 4-pin SO-8 surface mount package, it offers excellent switching performance with minimal losses.

The device exhibits a maximum power dissipation of 22.3 W and a very low gate charge of 30 nC, significantly reducing power losses during switching operations. Its low drain-source resistance of 15.6 milliohm further enhances efficiency and thermal performance. The transistor operates reliably over a wide temperature range from -55° C up to 150° C, making it suitable for demanding industrial and electronic environments.

Built using Vishay's TrenchFET Gen IV technology, this MOSFET targets various applications in power management, amplification, and switching devices across industries such as manufacturing, electronics, and power distribution. The package dimensions of 6.25 mm height, 5.25 mm length, and 1.14 mm width ensure easy integration into printed circuit boards with limited space.

Surface mount SO-8 package for space-saving PCB design. Low gate charge for reduced switching losses and enhanced efficiency. Wide operating temperature range for reliability in harsh environments. Low on-resistance to minimize conduction losses during operation.

High voltage and current ratings for versatile power applications. Robust design tested for Rg and UIS to ensure quality and reliability.

This MOSFET is ideal for use in industrial electronics, power supply regulation, motor controls, and automotive applications that demand efficient and reliable semiconductor switching devices. Explore the full Vishay MOSFET product range and other semiconductor solutions at EnvMart for optimized industrial and electronic component selection.