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Infineon HEXFET N-Channel MOSFET 160A 30V Enhancement Mode 3-Pin IPAK IRLU8743PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRLU8743PBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 135W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Features low on-resistance of 3mΩ for reduced conduction losses.
- Supports a maximum power dissipation of 135W for efficient thermal performance.
- Designed for operation from -55°C up to 175°C ensuring reliability in extreme environments.
- 3-pin IPAK TO-251 package facilitates easy through-hole mounting.
- Typical gate charge of 39nC enhances switching speed in high-frequency circuits.
- Maximum gate-source voltage of -20V to +20V for robust drive conditions.
- Integrated HEXFET technology ideal for power management and synchronous converter applications.
- Supports pulse current handling suitable for transient load scenarios.
Product Description
Infineon IRLU8743PBF is a HEXFET N-Channel MOSFET optimized for industrial and electronic power management applications requiring high current and low resistance switching. It features a maximum continuous drain current of 160 amps and operates up to 30 volts drain-source voltage with an enhancement channel mode.
The device is housed in a 3-pin IPAK TO-251 through-hole package allowing for straightforward installation and integration in power converters and management systems. With a maximum power dissipation capability of 135 watts, this MOSFET supports demanding thermal conditions and ensures efficient energy use.
The IRLU8743PBF operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for high-temperature industrial environments. Its low on-resistance value of 3 milliohms reduces conduction losses contributing to improved thermal management and energy efficiency.
Low RDS(on) of 3mΩ reduces power loss during operation. High continuous drain current of 160A ensures support for heavy loads. Wide operating temperature range from -55°C to 175°C for durability. IPAK TO-251 package with 3 pins supports easy mounting and cooling.
Typical gate charge of 39nC facilitates efficient switching performance. Robust gate voltage range of -20V to +20V for enhanced reliability. Forward voltage of 1V lowers energy consumption during conduction. Designed for synchronous buck converters, isolated DC-DC converters, and power supply management.
Excellent pulse current handling capability supports transient response applications.
This MOSFET is ideal for industrial, laboratory, and commercial power electronics requiring efficient, high-current switching devices. Common use cases include synchronous buck converters, isolated DC-DC converters in industrial power supplies, computer processor power management, and high-current power supply circuits.
Enrich your designs with Infineon’s robust and reliable HEXFET technology IRLU8743PBF MOSFET. Explore more semiconductor components and electronics at EnvMart to simplify sourcing and accelerate your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 160 amps.
It can operate at a maximum drain-source voltage of 30 volts.
The on-resistance is 3 milliohms, which helps reduce conduction losses.
The typical gate charge is 39 nanocoulombs, enhancing switching speed in high-frequency circuits.
This MOSFET operates reliably in a temperature range from -55°C to 175°C.
It is housed in a 3-pin IPAK TO-251 package, which facilitates easy through-hole mounting.
It supports a maximum power dissipation of 135 watts, ensuring efficient thermal performance.
The forward voltage is 1 volt, which helps lower energy consumption during conduction.
The maximum gate-source voltage is -20V to +20V, providing robust drive conditions.
This model is designed for synchronous buck converters, isolated DC-DC converters, and power supply management.
The height is 6.22 mm and the width is 2.39 mm.
This MOSFET has a pin count of 3.
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