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Infineon OptiMOS 3 N-Channel MOSFET 42 A 100 V Enhancement Surface Mount 8-Pin TDSON BSC160N10NS3GATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 5.35mm
Model BSC160N10NS3GATMA1
Width 6.35mm
Mount Type Surface
Series OptiMOS 3
Maximum Operating Temperature 150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 33mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 60W
Typical Gate Charge Qg @ Vgs 19nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V

Key Features

  • Supports high continuous drain current of 42A for demanding power applications.
  • Operates at a maximum drain-source voltage of 100V for versatile use.
  • Features low on-state resistance of 33mΩ to minimize power losses.
  • Designed for surface mount applications in compact PCB layouts.
  • Operating temperature range from -55°C to +150°C for harsh environments.
  • Typical gate charge of 19nC ensures efficient switching performance.
  • Maximum power dissipation rating of 60W supports robust usage.
  • Enhanced N-channel mode provides reliable electrical characteristics.

Product Description

Infineon BSC160N10NS3GATMA1 OptiMOS 3 Series N-Channel MOSFET offers a continuous drain current of 42A and a maximum drain-source voltage of 100V in an 8-pin TDSON surface mount package. Engineered for power management efficiency, this enhancement mode MOSFET excels in switching applications across automation, telecommunications, renewable energy, and motor control systems.

Its low on-state resistance of 33mΩ significantly reduces conduction losses, enabling energy-efficient circuit designs. The device supports typical gate charge of 19nC for rapid switching, and can handle pulsed currents up to 168A, making it ideal for transient load applications. Thermal operation spans from -55°C to +150°C, allowing use in demanding industrial environments.

The surface mount TDSON package ensures easy integration onto printed circuit boards, streamlining manufacturing and assembly. Maximum power dissipation of 60W supports robust operation under high load conditions. Gate-source voltage must be maintained within -20V to +20V to prevent damage. This device does not conform to automotive standards but is suitable for diverse industrial electronic applications.

Applications include power supplies and converters for energy management, compact power devices, motor control, telecommunications, and renewable energy systems where efficient power conversion is critical.

Supports high continuous drain current of 42A for demanding power applications. Operates at a maximum drain-source voltage of 100V for versatile use. Features low on-state resistance of 33mΩ to minimize power losses. Designed for surface mount applications in compact PCB layouts.

Operating temperature range from -55°C to +150°C for harsh environments. Typical gate charge of 19nC ensures efficient switching performance. Maximum power dissipation rating of 60W supports robust usage. Enhanced N-channel mode provides reliable electrical characteristics.

8-pin TDSON package facilitates compact, automated assembly. Maximum gate-source voltage safely ranges from -20V to +20V.

Choose the Infineon OptiMOS 3 N-Channel MOSFET BSC160N10NS3GATMA1 for high-efficiency power control in industrial, telecommunications, automation, and renewable sectors. Explore more semiconductor components and related industrial solutions on EnvMart.

Infineon OptiMOS 3 N-Channel MOSFET 42 A 100 V Enhancement Surface Mount 8-Pin TDSON BSC160N10NS3GATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 42A, making it suitable for demanding power applications.

It operates at a maximum drain-source voltage of 100V, providing versatility for various applications.

This MOSFET features a low on-state resistance of 33mΩ, which helps minimize power losses during operation.

The typical gate charge for this MOSFET is 19nC, ensuring efficient switching performance.

The operating temperature range is from -55°C to +150°C, allowing it to function in harsh environments.

The maximum power dissipation rating is 60W, supporting robust operation under high load conditions.

It comes in an 8-pin TDSON surface mount package, designed for compact PCB layouts.

The maximum gate-source voltage must be maintained between -20V and +20V to prevent damage.

This model is suitable for applications in power supplies, motor control, telecommunications, and renewable energy systems.

The height of this model is 1.1mm, which supports its compact design for surface mounting.

This device is an N-channel MOSFET, which is known for its efficient electrical characteristics.

The length is 5.35mm and the width is 6.35mm, making it suitable for tight PCB layouts.

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