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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC160N10NS3GATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Infineon BSC160N10NS3GATMA1 OptiMOS 3 Series N-Channel MOSFET offers a continuous drain current of 42A and a maximum drain-source voltage of 100V in an 8-pin TDSON surface mount package. Engineered for power management efficiency, this enhancement mode MOSFET excels in switching applications across automation, telecommunications, renewable energy, and motor control systems.
Its low on-state resistance of 33mΩ significantly reduces conduction losses, enabling energy-efficient circuit designs. The device supports typical gate charge of 19nC for rapid switching, and can handle pulsed currents up to 168A, making it ideal for transient load applications. Thermal operation spans from -55°C to +150°C, allowing use in demanding industrial environments.
The surface mount TDSON package ensures easy integration onto printed circuit boards, streamlining manufacturing and assembly. Maximum power dissipation of 60W supports robust operation under high load conditions. Gate-source voltage must be maintained within -20V to +20V to prevent damage. This device does not conform to automotive standards but is suitable for diverse industrial electronic applications.
Applications include power supplies and converters for energy management, compact power devices, motor control, telecommunications, and renewable energy systems where efficient power conversion is critical.
Supports high continuous drain current of 42A for demanding power applications. Operates at a maximum drain-source voltage of 100V for versatile use. Features low on-state resistance of 33mΩ to minimize power losses. Designed for surface mount applications in compact PCB layouts.
Operating temperature range from -55°C to +150°C for harsh environments. Typical gate charge of 19nC ensures efficient switching performance. Maximum power dissipation rating of 60W supports robust usage. Enhanced N-channel mode provides reliable electrical characteristics.
8-pin TDSON package facilitates compact, automated assembly. Maximum gate-source voltage safely ranges from -20V to +20V.
Choose the Infineon OptiMOS 3 N-Channel MOSFET BSC160N10NS3GATMA1 for high-efficiency power control in industrial, telecommunications, automation, and renewable sectors. Explore more semiconductor components and related industrial solutions on EnvMart.
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