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Vishay N-Channel MOSFET 30 V 70 A Enhancement Mode, Surface Mount SO-8 Package SiRA84BDP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SiRA84BDP-T1-GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | SiRA84BDP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 7.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 20.7nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET features a surface mount SO-8 package with 8 pins.
- It has a low maximum drain-source resistance of 7.1 milliohms.
- The device operates within a temperature range of -55°C to 150°C.
- The gate-to-source voltage ranges from -16 V to +20 V for optimal switching.
- It offers a maximum power dissipation of 36 W suitable for high power circuits.
- The typical gate charge is 20.7 nanocoulombs at Vgs.
- The forward voltage drop is low at 1.1 V, enhancing efficiency.
- This power MOSFET uses TrenchFET® Gen IV technology for improved performance.
Product Description
Vishay SiRA84BDP-T1-GE3 is a high-performance N-Channel MOSFET designed for demanding power semiconductor applications. It supports a maximum continuous drain current of 70 A and can withstand drain-source voltages up to 30 V, making it ideal for load switching and power management in electronics and industrial systems.
This MOSFET is housed in a compact, surface mount SO-8 package featuring 8 pins, facilitating easy PCB mounting and integration into high-density circuits. The device employs TrenchFET® Gen IV technology, which ensures low on-resistance and efficient switching properties, thus improving energy efficiency in power applications.
Operating reliably across a wide temperature range from -55°C to 150°C, this component is capable of maintaining performance in challenging environmental conditions encountered in industrial, automotive, and power management sectors.
The device's gate-to-source voltage ratings of -16 V to +20 V allow precise control and swift switching with low gate charge of 20.7 nC. It features a low forward voltage of 1.1 V which helps reduce power loss during conduction. Additionally, it has a maximum power dissipation rating of 36 W, supporting demanding power loads.
Typical applications include power supplies, motor control, battery management systems, and other electronic controls requiring efficient high-current switching solutions. This MOSFET features a surface mount SO-8 package with 8 pins.
It has a low maximum drain-source resistance of 7.1 milliohms. The device operates within a temperature range of -55°C to 150°C. The gate-to-source voltage ranges from -16 V to +20 V for optimal switching. It offers a maximum power dissipation of 36 W suitable for high power circuits.
The typical gate charge is 20.7 nanocoulombs at Vgs. The forward voltage drop is low at 1.1 V, enhancing efficiency. This power MOSFET uses TrenchFET® Gen IV technology for improved performance.
Vishay MOSFETs are engineered for industrial, automotive, consumer electronics, and power management applications, enabling reliable and energy-efficient designs. Explore more Vishay semiconductor solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SiRA84BDP-T1-GE3 is 70 A.
This MOSFET can withstand a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 36 W, making it suitable for high power circuits.
It operates reliably across a temperature range of -55°C to 150°C.
The gate-to-source voltage ranges from -16 V to +20 V for optimal switching performance.
The forward voltage drop is low at 1.1 V, which enhances efficiency during operation.
The typical gate charge is 20.7 nanocoulombs at Vgs.
The maximum drain-source resistance is 7.1 milliohms, contributing to its efficiency.
It is housed in a surface mount SO-8 package with 8 pins, facilitating easy PCB integration.
This power MOSFET uses TrenchFET® Gen IV technology, which enhances its performance characteristics.
Typical applications include power supplies, motor control, and battery management systems requiring efficient high-current switching solutions.
The dimensions of this MOSFET are 5.99 mm in length, 5 mm in width, and 1.07 mm in height.
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