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Vishay P-Channel MOSFET Single 100 V 11 A TO-220FP Package IRFI9540GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.8mm |
| Model | IRFI9540GPBF |
| Width | 10.3mm |
| Mount Type | Screw |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Number of Elements per Chip | 1 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -11A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.2Ω |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- High voltage isolation with 2.5 kVrms rating ensures robust performance.
- Low drain-source resistance of 0.2 ohms at 10 V GS reduces power loss.
- Typical gate charge of 61 nC at Vgs for efficient switching.
- Maximum power dissipation rated at 48 W for reliable operation.
- Wide operating temperature range from -55°C to 175°C.
- Isolated TO-220 FULLPAK package with creepage distance of 4.8 mm.
- Designed for screw mounting to ensure secure installation.
- Single transistor configuration suitable for various power electronic applications.
Product Description
Vishay IRFI9540GPBF is a high-performance single P-channel power MOSFET characterized by a maximum drain-source voltage of 100 V and a continuous drain current of -11 A. Packaged in an isolated TO-220 FULLPAK housing, this transistor offers excellent electrical isolation with a high voltage isolation rating of 2.5 kVrms, suitable for industrial and power management applications.
The device features a low drain-source resistance of 0.2 ohms measured at 10 V gate-source voltage, delivering efficient conduction with minimal power loss. It has a typical gate charge of 61 nC at 20 V gate drive, supporting fast switching and reduced gate drive losses.
The MOSFET can dissipate up to 48 W of power, making it appropriate for various load conditions. Its wide temperature operating range from -55°C to 175°C ensures durable performance in challenging environments. The isolated package includes a creepage distance of 4.8 mm between sink and lead, providing enhanced safety and reliability in power circuits.
Mounting is designed through screw terminals for secure mechanical and electrical connections. The single transistor configuration is ideal for discrete electronics, power supply circuits, and other semiconductor applications.
High voltage isolation with 2.5 kVrms rating ensures robust performance. Low drain-source resistance of 0.2 ohms at 10 V GS reduces power loss. Typical gate charge of 61 nC at Vgs for efficient switching. Maximum power dissipation rated at 48 W for reliable operation.
Wide operating temperature range from -55°C to 175°C. Isolated TO-220 FULLPAK package with creepage distance of 4.8 mm. Designed for screw mounting to ensure secure installation. Single transistor configuration suitable for various power electronic applications.
RoHS compliant and manufactured in China.
This MOSFET is widely used in industrial, automotive, power supply, and electronic manufacturing sectors. Its robust performance and isolation characteristics make it suitable for demanding applications.
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Frequently Asked Questions
The maximum drain-source voltage of this MOSFET is 100 V.
This model has a continuous drain current rating of -11 A.
It can dissipate up to 48 W of power, making it suitable for various load conditions.
The typical gate charge at Vgs is 61 nC.
The drain-source resistance at 10 V GS is 0.2 ohms.
The operating temperature range is from -55°C to 175°C.
It is packaged in an isolated TO-220 FULLPAK housing.
This model is designed for screw mounting, ensuring secure installation.
The creepage distance of the package is 4.8 mm.
Yes, this MOSFET is RoHS compliant.
It is suitable for various power electronic applications including industrial, automotive, and power supply sectors.
The maximum gate-source voltage for this model is 20 V.
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