Vishay Dual P-Channel MOSFET, Type SIA931DJ, -4.5 A Drain Current, -30 V Drain Source Voltage, 6-Pin SIA931DJ-T1-GE3

Vishay SIA931DJ-T1-GE3 is a high-performance dual P-channel MOSFET designed for surface mounting in a thermally enhanced PowerPack SC-70 6-pin package. With a maximum continuous drain current of -4.5 A and a drain to source voltage rating of -30 V, this device is ideal for efficient power switching and management applications.

Featuring trench FET Gen III technology, SIA931DJ-T1-GE3 provides low on-resistance values (0.065 ohms at 10 V gate voltage and 0.08 ohms at 6 V gate voltage), which minimizes conduction losses and improves overall thermal performance. The device supports a maximum power dissipation of 5 W and gate charge of 4.1 nC at the specified gate voltage, enabling fast switching and reduced switching losses.

The MOSFET operates reliably in a broad temperature range from -55°C to 150°C, making it suitable for challenging industrial and commercial environments. Its compact dimensions of 2.15 mm length, 2.15 mm width, and 0.8 mm height facilitate density optimization in PCB layouts.

This dual transistor configuration MOSFET finds applications in power management, electronic components, semiconductor circuits, and other industrial controls requiring efficient and reliable switching devices.

Dual transistor configuration for enhanced efficiency and simplified circuit design. Low on-resistance for reduced conduction losses and improved thermal management. Compact, surface-mount PowerPack packaging supports high-density PCB assembly.

Wide operating temperature range ensures durable use in diverse conditions. Suitable for industrial, laboratory, and commercial electronics applications.

Choose Vishay SIA931DJ-T1-GE3 MOSFET for dependable performance in power switching and control applications. Explore the full range of Vishay semiconductor products available on EnvMart.