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Toshiba N-Channel MOSFET, 2 A, 40 V Enhancement Mode, 3-Pin SOT-23 Package SSM3K339R

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Toshiba N-Channel MOSFET, 2 A, 40 V Enhancement Mode, 3-Pin SOT-23 Package SSM3K339R

Name: Toshiba N-Channel MOSFET, 2 A, 40 V Enhancement Mode, 3-Pin SOT-23 Package SSM3K339R
Brand: Toshiba
SKU: 150787
Price: 0.2 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Thailand
Brand	Toshiba
Height	700μm
Length	2.9mm
Model	SSM3K339R
Width	1.8mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	390mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	12V
Forward Voltage Vf	1.2V

Key Features

Enhancement mode channel ensuring efficient switching performance.
Low typical on-resistance (RDS(ON)) of 390 mΩ for reduced power loss.
High maximum power dissipation capacity of 2 W.
Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 1.1 nC for quick switching.
Surface mount package suitable for modern PCB designs.
Maximum gate-source voltage of 12 V allowing reliable gate drive.
Designed and manufactured in Thailand ensuring quality standards.

Product Description

Toshiba SSM3K339R is a high-quality N-Channel Enhancement Mode MOSFET offering a maximum continuous drain current of 2 A and a maximum drain-source voltage of 40 V. Housed in a compact 3-pin SOT-23 surface mount package, it is ideal for power management and switching applications in electronic circuits.

This MOSFET provides low drain-source on-resistance (RDS(ON)) of approximately 390 mΩ, improving efficiency by minimizing conduction losses. The device supports operation in a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and consumer electronics where thermal resilience is required.

The SSM3K339R features a typical gate charge of 1.1 nC at the gate-source voltage, allowing fast switching and reduced gate drive requirements. Its maximum power dissipation is rated at 2 W ensuring reliable performance under load conditions. The maximum gate-source voltage rating of 12 V supports robust gate drive scenarios without damaging the device.

The physical dimensions of this MOSFET are compact, with a length of 2.9 mm, width of 1.8 mm, and height of 700 μm, supporting high-density circuit board layouts and surface mount technology. It is manufactured in Thailand, assuring compliance with Toshiba's quality and manufacturing standards.

This MOSFET finds applications in power management switches, DC-DC converters, load switching, and switching power supplies across industrial, laboratory, and commercial sectors. Enhancement mode N-Channel MOSFET with 2 A continuous drain current.

Maximum drain-source voltage of 40 V for versatile circuit designs. Low on-resistance aiding energy-efficient switching. Supports operating temperatures from -55°C up to 150°C. Compact 3-pin SOT-23 surface mount package for efficient board space usage.

Fast switching enabled by low gate charge of 1.1 nC. Maximum power dissipation rated at 2 W for reliability. Manufactured in Thailand meeting quality standards. Explore a wide range of semiconductor and MOSFET products at EnvMart for your electronic component needs.