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Toshiba N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin SOP TPH3R704PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 950μm |
| Length | 5mm |
| Model | TPH3R704PL |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 92A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement type channel mode ensures efficient switching.
- Maximum power dissipation rating is 81 W supporting high performance.
- Low drain-source on-resistance of 3.0 mΩ at VGS = 10 V reduces power loss.
- Typical gate charge of 27 nC allows fast switching speeds.
- Operating temperature range from −55°C to 175°C for robust applications.
- Forward voltage of −1.2 V minimizes conduction losses.
- Compact dimensions of 5 mm length, 5 mm width, and 950 µm height fit standard PCB layouts.
- Surface mount SOP package with 8 pins enables easy PCB integration.
Product Description
The Toshiba TPH3R704PL is an N-Channel MOSFET designed for efficient power switching applications. It supports a maximum continuous drain current of 92 A and withstands up to 40 V between drain and source terminals. This device features an enhancement mode channel that facilitates high speed, low power switching ideal for power management circuits.
The MOSFET is packaged in a compact 8-Pin SOP surface mount package measuring 5 mm by 5 mm with a thin height of 950 μm, allowing for space-saving PCB designs. It offers a low drain-source on-resistance of 3.0 mΩ at 10 V gate drive, minimizing conduction losses, and a typical gate charge of 27 nC for fast switching performance.
Operating temperature spans from −55°C to 175°C, making it suitable for industrial and automotive applications requiring wide thermal ranges. The maximum power dissipation of 81 W supports high load conditions reliably. Additional features include a forward voltage of −1.2 V and low leakage current, which contribute to energy-efficient operation.
This MOSFET is well-suited for use in high-efficiency DC-DC converters, switching voltage regulators, motor driver circuits, and other electronic power control systems. The device does not carry specific automotive standards but is designed for robust performance in demanding electrical environments.
Enhancement mode N-Channel MOSFET with 8-Pin SOP package. Maximum continuous drain current of 92 A and drain-source voltage of 40 V. Low RDS(ON) at 3.0 mΩ typ. reduces power losses. Typical gate charge of 27 nC supports fast switching.
Broad operating temperature range from −55°C to 175°C. Maximum power dissipation rating of 81 W. Compact dimensions enable dense PCB mounting.
Ideal for industrial, automotive, and electronic component manufacturing applications, this Toshiba MOSFET is a reliable solution in semiconductor discretely switching power electronics. Explore a wide range of semiconductors and MOSFETs on EnvMart for your project needs.
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Frequently Asked Questions
The Toshiba TPH3R704PL has a maximum continuous drain current of 92 A.
This MOSFET can withstand a maximum drain-source voltage of 40 V.
It has a typical gate charge of 27 nC, which supports fast switching speeds.
The operating temperature range spans from −55°C to 175°C, making it suitable for various applications.
It comes in an 8-Pin SOP surface mount package, which allows for easy PCB integration.
The drain-source on-resistance is low at 3.0 mΩ at a gate-source voltage of 10 V.
The maximum power dissipation rating is 81 W, supporting high performance in load conditions.
The forward voltage is −1.2 V, which helps minimize conduction losses.
The dimensions are 5 mm in length, 5 mm in width, and 950 μm in height.
It features an enhancement type N-channel, which is designed for efficient power switching applications.
This model is suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor driver circuits.
The maximum gate-source voltage is 20 V, allowing for flexibility in circuit design.
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