Infineon N-Channel MOSFET 11.3A 200V Enhancement Mode 8-Pin TDSON Package BSC12DN20NS3GATMA1

Infineon BSC12DN20NS3GATMA1 is a high-performance N-Channel MOSFET with an enhancement mode operation, capable of handling continuous drain current up to 11.3 A and drain-source voltage of 200 V. This device comes in a compact 8-pin TDSON package designed for surface mounting, making it well-suited for space-constrained electronic assemblies.

This MOSFET excels in synchronous rectification tasks commonly found in 48 V power systems, DC-DC converters, uninterruptable power supplies (UPS), and inverters used in DC motor drives. It ensures minimal board space consumption and high power density, contributing to cost-effective system designs.

The device maintains stable operation across a wide temperature range from -55°C to 150°C, enabling reliable performance in harsh industrial environments. The typical gate charge of 6.5 nC allows for efficient switching, which reduces power losses and enhances system efficiency. The low maximum drain-source resistance of 125 mΩ further supports energy-efficient operation.

With a maximum power dissipation rating of 50 W, the MOSFET is capable of sustaining high-power applications without compromising on durability. Its small footprint dimensions of 5.35 mm length, 6.35 mm width, and 1.1 mm height facilitate integration into compact designs.

Maximum continuous drain current of 11.3 A for robust switching. Drain-source voltage rating of 200 V supports various power supply needs. Low Rds(on) of 125 mΩ reduces conduction losses. High power dissipation of 50 W ensures durability.

Wide operating temperature range from -55°C to 150°C for industrial use. Compact 8-pin TDSON surface mount package. Typical gate charge of 6.5 nC enhances switching efficiency. Applications include synchronous rectification, DC-DC converters, UPS, and motor inverters.

Industrial applications benefiting from this MOSFET include power management in telecommunications, manufacturing automation, renewable energy systems, and automotive electronics. Integration of this MOSFET enhances system efficiency and reduces overall system cost due to reduced paralleling requirements and minimal board space usage.

Choose this Infineon MOSFET for your power electronic design requiring efficiency, compact size, and reliable high-current switching capability.

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