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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3mm |
| Model | BSR316PH6327XTSA1 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | BSR316P |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-59 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 360mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 5.3nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -0.8V |
Infineon BSR316PH6327XTSA1 is a P-Channel MOSFET designed for efficient power switching and control in automotive and consumer electronics sectors. It features enhancement mode operation with a maximum continuous drain current of 360 mA and maximum drain-source voltage of 100 V, making it suitable for low power applications.
Housed in a compact 3-pin SC-59 surface mount package measuring 3 mm length, 1.6 mm width, and 1.1 mm height, this MOSFET facilitates compact PCB layouts. Its maximum power dissipation rating of 500 mW combined with a low typical gate charge of 5.3 nC enables effective switching with minimal energy loss.
Operating reliably over a wide temperature range from -55°C to 150°C and meeting the stringent automotive AEC-Q101 standard, the BSR316PH6327XTSA1 model is ideal for harsh environmental conditions encountered in automotive systems. The device's low maximum drain-source resistance of 2.2 Ω further enhances efficiency by reducing conduction losses.
Common target applications include automotive motor control, DC-DC power conversion, consumer electronics like notebooks, e-mobility platforms, and onboard chargers. Its Pb-free lead plating supports environmental compliance.
The device has a surface mount SC-59 package with 3 pins for compact PCB integration. Maximum continuous drain current of 360 mA supports low power applications. Maximum drain source voltage of 100 V suitable for automotive and consumer electronics.
Low maximum drain-source resistance of 2.2 Ω ensures efficient conduction. Enhancement mode operation with typical gate charge of 5.3 nC allows efficient switching. Meets automotive standard AEC-Q101 for reliability in vehicle systems.
Wide operating temperature range from -55°C to 150°C for harsh environments. Power dissipation rating of 500 mW supports low power dissipation requirements.
This Infineon MOSFET addresses key requirements for electronic power management in industrial, automotive, and consumer electronic sectors. Browse other semiconductor and power component options at EnvMart.
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