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Nexperia N-Channel Enhancement MOSFET, 12 V, 3.2 A Continuous Drain Current, 4-Pin DFN Package PMXB40UNEZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 360μm |
| Length | 1.15mm |
| Model | PMXB40UNEZ |
| Width | 1.05mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.2A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 121mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.33W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 1.2V |
| Leadless ultra small and thin SMD plastic package | 1.1 x 1.0 x 0.37 mm |
Key Features
- The device features a low on-state resistance of 121 milliohms for efficient switching.
- It supports a maximum power dissipation of 8.33 W allowing reliable operation.
- Low threshold voltage of 0.65 V suits portable and battery-powered applications.
- Compact leadless DFN package measures 1.1 x 1.0 x 0.37 mm with exposed drain pad for thermal management.
- Wide operating temperature range from -55°C to 150°C ensures durability in industrial environments.
- Typical gate charge of 66 nC enables fast switching performance.
- Protects against electrostatic discharge up to 1 kV.
- Ideal for use as low-side load and charging switches in portable devices.
Product Description
Nexperia PMXB40UNEZ is a high-performance N-channel enhancement mode Trench MOSFET designed for demanding electronic applications requiring efficient power management. This MOSFET operates at a maximum drain-source voltage of 12 V with a continuous drain current of 3.2 A, ensuring robust switching capabilities in compact circuits.
Packaged in a leadless ultra-small and thin DFN1010D-3 surface-mounted device (SMD), the component measures 1.1 x 1.0 x 0.37 mm, featuring an exposed drain pad to enhance thermal conduction and reliability.
Its trench technology provides a very low on-state resistance of 121 mΩ and a low threshold voltage of 0.65 V, favoring battery-operated and portable device applications.
Designed to operate across a wide temperature range from -55°C to +150°C, it is suitable for use in industrial, automotive, and commercial electronic systems requiring durable components.
The device exhibits a typical gate charge of 66 nC at Vgs of 6 V for fast switching and includes electrostatic discharge protection up to 1 kV to enhance component longevity.
Typical applications include low-side load and charging switches in portable devices, power management modules, LED driver circuits, and DC-to-DC converters for efficient energy utilization.
The device features a low on-state resistance of 121 milliohms for efficient switching. It supports a maximum power dissipation of 8.33 W allowing reliable operation. Low threshold voltage of 0.65 V suits portable and battery-powered applications.
Compact leadless DFN package measures 1.1 x 1.0 x 0.37 mm with exposed drain pad for thermal management. Wide operating temperature range from -55°C to 150°C ensures durability in industrial environments. Typical gate charge of 66 nC enables fast switching performance.
Protects against electrostatic discharge up to 1 kV. Ideal for use as low-side load and charging switches in portable devices. Suitable for power management, LED drivers, and DC-to-DC converter applications. Explore further Nexperia semiconductor components and MOSFETs at EnvMart for reliable electronic component sourcing and engineering design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.2 A.
It can handle a maximum drain-source voltage of 12 V.
The on-state resistance is 121 milliohms, which allows for efficient switching.
This unit is packaged in a leadless ultra-small and thin DFN package measuring 1.1 x 1.0 x 0.37 mm.
It operates within a wide temperature range from -55°C to +150°C.
The typical gate charge at Vgs of 6 V is 66 nC, enabling fast switching performance.
The maximum power dissipation supported is 8.33 W.
It is suitable for use as low-side load and charging switches in portable devices, as well as in power management modules and LED driver circuits.
The maximum gate-source voltage is 8 V.
It includes protection against electrostatic discharge up to 1 kV, enhancing component longevity.
The dimensions of the DFN package are 1.1 mm in length, 1.0 mm in width, and 0.37 mm in height.
This device features an N-channel type, specifically designed as an enhancement mode MOSFET.
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