onsemi 200 V 3 A Low Leakage Diode, 2-Pin DO-41 1N5402RLG

onsemi 1N5402RLG is a high-quality low leakage rectifier diode designed for through-hole mount applications requiring reliable and efficient power rectification. The diode supports a maximum continuous forward current of 3 A and a peak reverse repetitive voltage of 200 V, making it ideal for power supply circuits and general-purpose rectification in both industrial and commercial electronic equipment.

The device is housed in a DO-41 package featuring 2 pins for reliable connection and ease of installation on printed circuit boards. Its low forward voltage drop of 1 V and minimal leakage current reduce energy dissipation and improve overall circuit performance. The robust construction enables operation within a wide temperature range of -65°C to 150°C, suitable for demanding environments.

Furthermore, the diode withstands peak non-repetitive forward surge currents of up to 200 A, offering protection against transient spikes common in power electronics. The fast reverse recovery time of 1.6 ns enables high-speed switching applications, enhancing efficiency in switching regulators and inverter circuits.

The compact physical dimensions of approximately 9.5 mm length and 5.3 mm diameter provide easy integration into space-constrained designs. This diode is primarily used for power rectification in industrial electronics, power supplies, control systems, and other semiconductor applications where dependable forward current handling and low leakage are essential.

Through-hole mount type ensures stable installation in circuit boards. Low leakage rectifier diode with maximum continuous forward current of 3 A. Peak reverse repetitive voltage rating of 200 V suitable for various electrical circuits.

Compact DO-41 package with 2 pins for easy integration. Maximum forward voltage drop of 1 V to maintain circuit efficiency. Wide operating temperature range from -65°C to 150°C for industrial use. Peak non-repetitive forward surge current rating of 200 A for transient conditions.

Minimal peak reverse current of 10 μA to reduce power loss. Fast peak reverse recovery time of 1.6 ns for high-speed switching. Dimensions approximately 9.5 mm length and 5.3 mm diameter, suitable for compact designs.

This onsemi diode is commonly employed in electronics manufacturing, industrial automation, and power management systems. It ensures reliable current rectification and protection in circuits requiring efficient power control.

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