Infineon OptiMOS-T2 N-Channel MOSFET, 100 A, 40 V, 3-Pin TO-252 Surface Mount IPD100N04S402ATMA1

Infineon IPD100N04S402ATMA1 is a high-performance OptiMOS-T2 N-Channel MOSFET designed for demanding automotive and industrial applications requiring robust power switching and thermal management. The device supports a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V, housed in a surface-mount TO-252 package with 3 pins for compact and reliable assembly.

It features an enhanced mode channel for efficient conduction with low on-resistance of 2mΩ, minimizing conduction losses and improving overall energy efficiency. The MOSFET can dissipate up to 150 W of power, allowing for substantial heat handling capabilities required in high-load environments. Its typical gate charge of 91nC ensures precise gate control and switching performance, while the forward voltage drop of 1.2 V reduces power loss during operation.

The device maintains stable operation over an extended temperature range from -55°C to 175°C, making it suitable for harsh automotive and industrial environments. The maximum gate-to-source voltage rating of ±20 V protects the gate from voltage spikes and transient conditions.

Designed in compliance with AEC-Q101 automotive standards, IPD100N04S402ATMA1 is suitable for automotive power stages including DC-DC converters, motor drive switches, battery management systems, and power distribution modules. Its surface mount TO-252 package ensures ease of integration into compact power modules and electronic systems.

2mΩ maximum Rds(on) provides low conduction losses. 150 W power dissipation supports high-load applications. Wide operating temperature range (-55°C to 175°C). High gate tolerance ±20 V enhances reliability. AEC-Q101 automotive qualified for demanding environments.

Explore the Infineon MOSFET range for reliable and efficient power switching components for diverse industrial, automotive, and commercial electronics applications at EnvMart.