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onsemi NPN Power Transistor TO-252 3 A 100 V 1.56W Surface Mount MJD31CT4G

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onsemi NPN Power Transistor TO-252 3 A 100 V 1.56W Surface Mount MJD31CT4G

Name: onsemi NPN Power Transistor TO-252 3 A 100 V 1.56W Surface Mount MJD31CT4G
Brand: onsemi
SKU: 138731

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.38mm
Length	6.73mm
Model	MJD31CT4G
Mount Type	Surface
Series	MJD31
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	3A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	20
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	1.2V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	50μA
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	1.56W
onsemi MJD31CT4G 1 Transistor NPN, 3 A 100 V HFE	20, 3-Pin DPAK

Key Features

Maximum continuous collector current of 3 A for robust power applications.
Collector-emitter voltage rating of 100 V ensuring suitability in medium power circuits.
TO-252 package type with 3-pin configuration for PCB surface mounting.
Minimum DC current gain (hFE) of 20 providing reliable amplification.
Maximum power dissipation of 1.56 W for thermal management considerations.
Wide operating temperature range from -65°C to 150°C for diverse environmental use.
Automotive qualified per AEC-Q101 standard ensuring high reliability for automotive electronics.
Saturation voltage (VCE(sat)) max 1.2 V for efficient switching performance.

Product Description

onsemi MJD31CT4G is a high-performance NPN power transistor engineered for use in power switching and amplification applications. Featuring a TO-252 surface mount package with a 3-pin layout, this transistor supports a maximum continuous collector current of 3 A and a collector-emitter voltage rating of 100 V, making it suitable for medium power devices in industrial, automotive, and consumer electronics.

The device offers a minimum DC current gain (hFE) of 20 along with a maximum power dissipation of 1.56 W, ensuring efficient operation within thermal constraints. Its wide operating temperature range from -65°C to 150°C supports reliability across diverse environmental conditions. The maximum emitter-base voltage is 5 V, and collector-base voltage is rated at 100 V, providing robust electrical characteristics.

This transistor is packaged in the TO-252 DPAK form factor optimized for surface mounting on printed circuit boards. It is automotive qualified to the AEC-Q101 standard, guaranteeing compliance with stringent industry reliability requirements. Typical applications include power management circuits, automotive electronics, and industrial control systems where dependable switching and amplification are crucial.

Maximum continuous collector current: 3 A. Collector-emitter voltage: 100 V. Minimum DC current gain (hFE): 20. Maximum power dissipation: 1.56 W. Operating temperature range: -65°C to 150°C. Package: TO-252 (DPAK), 3-pin surface mount.

Automotive standard: AEC-Q101 qualified. Max collector cut-off current: 50 μA.

This transistor is ideal for use in electronic circuits requiring reliable high-current switching and amplification. Its robust specifications make it suitable for industrial, automotive, and manufacturing equipment electronics.

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