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| Country of Origin | Malaysia |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.2mm |
| Model | IDP30E65D1XKSA1 |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | IDP30E65D1 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 60A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 800μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A |
| Maximum Forward Voltage Vf | 1.7V |
| Low reverse recovery charge | forward voltage ratio for BiC performance |
Infineon IDP30E65D1XKSA1 is a high-performance fast switching diode designed for power electronics applications requiring rapid and efficient switching capabilities. Featuring a maximum peak reverse voltage of 650 V and a continuous forward current rating of 60 A, this diode delivers robust performance in a compact TO-220 through-hole mount package with three pins.
The single diode configuration ensures streamlined circuit integration. It operates efficiently with a maximum forward voltage drop of 1.7 V, minimizing power dissipation. Its peak non-repetitive forward surge current capacity of 180 A allows it to tolerate transient conditions without damage.
Operating temperature ranges from -40°C to 175°C, making it suitable for harsh industrial environments. Its compact size with a height of 15.95 mm, length of 10.2 mm, and width of 4.5 mm supports flexible PCB layouts. The device does not carry automotive certifications but is manufactured under rigorous standards in Malaysia.
This diode incorporates low reverse recovery charge and low turn-on losses which result in low EMI and enhanced efficiency, important for applications like power factor correction (PFC), telecom systems, welding machines, uninterruptible power supplies (UPS), and motor drives operating up to 30 kHz.
It belongs to the Rapid 1 and Rapid 2 families of Infineon diodes, known for ultra-soft 600 V/1200 V emitter controlled technology. These diodes are easy to parallel and feature good electromagnetic interference behavior.
Single diode configuration intended for fast switching applications. Maximum forward voltage drop is 1.7 V, ensuring efficient conduction. Designed for high peak non-repetitive surge currents up to 180 A. Wide operating temperature range from -40°C up to 175°C.
Package dimensions: height 15.95 mm, length 10.2 mm, width 4.5 mm. Low reverse recovery charge and low turn-on losses improve circuit performance. Suitable for telecom, UPS, welding, AC-DC converters, and motor drive applications up to 30 kHz.
Manufactured in Malaysia with thorough quality controls.
This high-reliability switching diode is ideal for industrial, electronic, telecom, and HVAC equipment designs requiring rapid and durable diode switching components. Explore more Infineon power semiconductors in EnvMart’s extensive semiconductor catalog.
Explore more products in our Switching Diodes category.
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