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Vishay Silicon Junction Switching Diode 250 mA 200 V SOD-123 BAV20W-E3-18

Category Switching Diodes Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.25mm
Length 2.85mm
Model BAV20W-E3-18
Width 1.7mm
Mount Type Surface
Series BAV20W
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 410mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 200V
Maximum Series Resistance @ Maximum If 5Ω

Key Features

  • Single diode silicon junction construction ensures reliable switching performance.
  • Maximum power dissipation of 410 mW supports robust operation.
  • Fast switching with 50 ns peak reverse recovery time minimizes switching losses.
  • Surface mount SOD-123 package with 2 pins and epoxy glass body for durability.
  • Operating temperature range from -55°C to 150°C accommodates thermal demands.
  • Low leakage current typical below 0.2 μA enhances efficiency.
  • High forward surge capability up to 2.5 A peak current.
  • Matte tin plated leads are solderable per industry standards ensuring ease of assembly.

Product Description

Vishay BAV20W-E3-18 is a silicon junction switching diode designed for reliable, fast switching applications. It features a maximum forward current of 250 mA and a peak reverse voltage rating of 200 V ensuring suitability for high voltage rectification and snubber circuits. Packaged in a SOD-123 surface mount device with a compact 2.85 mm length, 1.7 mm width, and 1.25 mm height, this diode offers space-saving solutions for electronic circuits.

The device exhibits low leakage current typically less than 0.2 microamperes and fast switching with a peak reverse recovery time of 50 nanoseconds. It can dissipate up to 410 mW power and withstand peak non-repetitive forward surge currents up to 2.5 A, assuring enhanced durability under transient conditions.

The diode's glass passivated junction combined with a molded epoxy body meets UL 94 V-0 flammability rating, providing exceptional reliability and safety. Matte tin plated leads conform to solderability standards J-STD-002 and JESD 22-B102, facilitating ease of PCB assembly. Polarity is clearly marked with a color band denoting the cathode end to prevent installation errors.

Typical applications include high voltage rectification for G2 grid CRTs and TVs, as well as snubber circuits for camera flash units. Its industrial suitability spans electronic components manufacturing, repair, and design requiring dependable silicon switching diodes.

Manufactured in China, the BAV20W-E3-18 diode is a commercial-grade component free from automotive certification but widely employed in consumer and industrial electronics. The product's compact dimensions and fast switching attributes make it an ideal choice for efficient electronic switching and protection roles.

Single silicon junction diode with 250 mA forward current. Surface mount SOD-123 package with 2 pins. Maximum peak reverse voltage of 200 V. Fast recovery time of 50 ns. Power dissipation of 410 mW. Wide operating temperature range from -55°C to 150°C.

Low leakage, less than 0.2 μA typical. High forward surge capacity of 2.5 A. Glass passivated junction and molded epoxy body. Matte tin plated leads solderable to industry standards. Explore Vishay Switching Diodes and semiconductor components on EnvMart for industrial, laboratory, and electronic manufacturing needs.

Vishay Silicon Junction Switching Diode 250 mA 200 V SOD-123 BAV20W-E3-18
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Frequently Asked Questions

The maximum forward current of the BAV20W-E3-18 diode is 250 mA.

This model has a peak reverse voltage rating of 200 V.

The dimensions of this diode are 2.85 mm in length, 1.7 mm in width, and 1.25 mm in height.

It can dissipate up to 410 mW of power.

The diode can withstand a peak non-repetitive forward surge current of up to 2.5 A.

The operating temperature range is from -55°C to 150°C.

This diode is packaged in a SOD-123 surface mount package.

The peak reverse recovery time is 50 ns.

The typical leakage current is below 0.2 μA.

The leads are matte tin plated and solderable per industry standards.

The polarity is marked with a color band denoting the cathode end.

Typical applications include high voltage rectification for G2 grid CRTs and snubber circuits for camera flash units.

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